Manufacture of semiconductor
专利汇可以提供Manufacture of semiconductor专利检索，专利查询，专利分析的服务。并且PURPOSE: To partially change semiconductor or metallic layer into insulating layer through the process consisting of injecting the ions of an element which produces insulating material by combining with the component element of said material layer and applying laser beam on said material layer so that the contamination of said insulating layer can be prevented while the heating of said material layer is avoided.
CONSTITUTION: N-type layer 2 is epitaxially formed on N
+ -type Si substrate 1, said substrate 1 is covered with SiO
2 film 3, and polycrystalline Si layer 4 is deposited thereon. Next, nitrogen ions N
+ are injected into said layer 4 with injection energy and dose fixed at 30W40KV and 3×10
17 /cm
2 respectively. Thereafter, said layer 4 is changed into Si
3 N
4 layer 4' by applying on N
+ -ion injection range Nd-YAG laser beam whose application energy density is fixed at 1W5J/cm
2 . Next, thick field SiO
2 films 5 extending up to said substrate 1 are formed at the both ends of the layer 2 through the etching removal of the other portions than said layer 4', of said film 4 and the heat-treatment of said substrate 1, an opening is provided by removing said layer 4' and P-type base range 6 and N-type emitter range 7 are diffusedly formed in said layer 2 and in said base range 6 respectively.
COPYRIGHT: (C)1980,JPO&Japio，下面是Manufacture of semiconductor专利的具体信息内容。
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