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Semiconductor photo detector

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专利汇可以提供Semiconductor photo detector专利检索,专利查询,专利分析的服务。并且PURPOSE: To realize a semiconductor photo detector of good performance by providing groove form concave parts in a semiconductor substrate, diffusion-forming a P
+ layer and an N
+ layer therein and reverse-biasing between these regions thereby forming a depletion layer.
CONSTITUTION: Concave parts 9 are formed in a semiconductor substrate 10 and a P
+ layer 21 and an n
+ layer 22 and doped on the surface thereof. The substrate surface other than the concave parts 8 is covered with an insulation film 13. Metal films 23, 24, terminals 16, 17 are provided on the layers 21, 22 and a bias power source VB is connected to let a depletion layer shown by dot-dash lines be formed. Then, an electric field E of broken lines is produced between the layers 21, 22, yielding a light absorbing layer. When light enters the light absorbing layer through the film 13, light exciting carriers are generated and are accelerated by the electric field E, then photo current proportional to the intensity of the incident light flows into a load resistance RL.
COPYRIGHT: (C)1979,JPO&Japio,下面是Semiconductor photo detector专利的具体信息内容。

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