Bipolar transistor
专利汇可以提供Bipolar transistor专利检索，专利查询，专利分析的服务。并且PURPOSE: To lower staturation voltage between collector and emitter and increase efficiency, by providing a depression on a main flat surface and further providing a base and a emitter on the bottom surface, in an epitaxial double diffusion type bipolar transistor.
CONSTITUTION: An n
- -type collector layer 2, which is to become a channel region, is grown epitaxially on n
+ -type Si substrate 1, which is to become a source of an electrostatic induction transistor. Next, p
- -type base layer 6 is formed by diffusion in layer 2, and n
+ -type emitter region 5 is provided in it. At this time, however, if the axis orientation of substrate 1 is , layer 2, in which these regions are formed, is etched by using a mixture of potassium hydroxide and alchohol, or a mixture of ethylenediamine, pyrocatechol and water, and thereby depression 7 is formed here. By this, the part of low impurity concentration of collector layer 2 of the npn-transistor is removed. As a result, saturation voltage between collector and emitter is reduced, suitable for application to a logic element in I
2 L.
COPYRIGHT: (C)1980,JPO&Japio，下面是Bipolar transistor专利的具体信息内容。
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