Semiconductor integrated circuit
专利汇可以提供Semiconductor integrated circuit专利检索，专利查询，专利分析的服务。并且PURPOSE: To provide a high-speed output circuit of small area and high dielectric strength, by using an MOS transistor of high dielectric strength to drive a bipolar transistor whose base region is an insular semiconductor region provided in the semiconductor substrate of a complementary MOS integrated circuit.
CONSTITUTION: A p-type insulator region 2, which is to be the base of a bipolar transistor, and the drain region 10 of an MOS transistor of high dielectric strength are provided in an n-type semiconductor substrate 1. An n
+ -type emitter region 3, a P
+ -type source region 5 and a drain contact region 4 are then provided. A gate 6 is provided further. The base region 2 and the drain region 4 are then connected to each other. As a result, the output transistor acts as an emitter follower and a high current amplification factor is obtained. Therefore, a transistor of small area can be used and the switching speed can be raised. A high dielectric strength is obtained because the output transistor is driven by the MOS transistor of high dielectric strength.
COPYRIGHT: (C)1980,JPO&Japio，下面是Semiconductor integrated circuit专利的具体信息内容。
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