Complementary mos inverter circuit device and its manufacture
专利汇可以提供Complementary mos inverter circuit device and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE:To increase the driving capacity to the high load without sacrificing the advantages of the circuit by forming the circuit with P-type and N-type FET's plus PNP-type and NPN-type bipolar semiconductors. CONSTITUTION:Complementary MOS inverter circuit 1 is formed with P-type and N-type IGFET2 and 3 plus NPN-type and PNP-type bipolar transistors 4 and 5. In case the input signal to be applied to gate 13 and 14 of FET2 and 3 through terminal 6 is higher than the positive threshold voltage, FET3 conducts. And transistor 5 delivers the negative signal through output terminal 7. In case the input signal becomes less than the negative threshold voltage, FET2 conducts to deliver the positive signal from transistor 4. Thus, circuit 1 performs the inverter's function with no use of the passive load element, and the power is consumed only at the operation time of switching. As a result, a circuit featuring the low power consumption and high driving capacity to the high load can be obtained. Such circuit can be formed on the single semiconductor substrate.，下面是Complementary mos inverter circuit device and its manufacture专利的具体信息内容。
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