Semiconductor device

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专利汇可以提供Semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE: To secure the steady characteristics for the diode by avoiding exposure of the breakdown part of the PN junction constituting the diode onto the surface of the semiconductor substrate when the Zener diode is formed within bipolar IC.
CONSTITUTION: N
+ -type buried layer 3 is formed by diffusion on P-type Si substrate 1 with SiO
2 film 2 used as the mask, and film 2 is removed to form N
- -type layer 4 on the entire surface through the epitaxial growth. Then film 2 is used as the mask again to form by ion injection N
+ -type layer 5a to reduce the collector resistance for the transistor within layer 4 plus N
+ -type layer 5b to stop the area causing the breakdown within the semiconductor substrate. After this, an opening is formed to film 2 to form P-type isolation region 6, and at the same time both layer 5a and 5b made to reach layer 3 simultaneously through the heat treatment. Thus, the caused N
- -type region 4a and 4b are used as the Zener diode and the bipolar transistor respectively. Then P
+ -type layer 8 to be used as the P pole and P-type base layer 7 are formed by diffusion at region 4a and 4b respectively, and N
+ -type emitter region 9 is provided within layer 7.
COPYRIGHT: (C)1979,JPO&Japio,下面是Semiconductor device专利的具体信息内容。

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