Production of semiconductor integrated circuit
专利汇可以提供Production of semiconductor integrated circuit专利检索，专利查询，专利分析的服务。并且PURPOSE: To restrain surface charge quantity Q
ss low by forming the SiO
2 film of the P-type layer for a bipolar transistor or a diode simultaneously with forming a gate insulating film.
CONSTITUTION: Thermal oxide film 2 is provided on P-type Si substrate 1 having N
+ buried layer BL and N-type islands 1A and 1B which are separated from each other. Windows are selectively provided in film 2, and P-type diffusion layers 6 to 8 are formed in an oxidizable atmosphere. SiO
2 9 to 11 generated at this time have a bad purity and a large Q
ss . Next, a window is provided in film 9 to form N
+ diffusion layers 13A and 13B, and SiO
2 14A and 14B are formed newly. Next, film 9 on P layer 6 and the oxide film between P layers 7 and 8 are removed, and high- purity SiO
2 15 and 16 are formed by heat treatment in an oxidizable atmosphere. After that, electrodes are provided in prescribed positions. As a result, the linear deterioration of the forward characteristic of hFE or N and P diodes which is generated in a conventional bipolar IC is prevented.
COPYRIGHT: (C)1979,JPO&Japio，下面是Production of semiconductor integrated circuit专利的具体信息内容。
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