AVALANCHE PHOTODIODE WITH LOW BREAKDOWN VOLTAGE
专利汇可以提供AVALANCHE PHOTODIODE WITH LOW BREAKDOWN VOLTAGE专利检索，专利查询，专利分析的服务。并且An Si/Ge SACM avalanche photodiodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.，下面是AVALANCHE PHOTODIODE WITH LOW BREAKDOWN VOLTAGE专利的具体信息内容。
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