Compact, high-power, high-efficiency silicon avalanche diode l-band oscillator专利检索-雪崩二极管二极管真空电子管电子零件及设备专利检索查询-专利查询网

Compact, high-power, high-efficiency silicon avalanche diode l-band oscillator

阅读：562发布：2022-10-24

专利汇可以提供Compact, high-power, high-efficiency silicon avalanche diode l-band oscillator专利检索，专利查询，专利分析的服务。并且A compact, easily tunable, silicon avalanche diode oscillator for pulsed operation in the L-band which has an efficiency of about 40 percent, equal to that of vacuum tube oscillators operating at these frequencies, is obtained by utilizing a coaxial line composed of three serially connected sections in which the intermediate section has a characteristic impedance significantly larger than either of the other sections. One end of the coaxial line is short circuited; the avalanche diode is coupled to the coaxial line at a point between the short circuit and the beginning of the intermediate section; a variable capacitance is connected across the intermediate section at a given point thereof; and the other end of the coaxial line is connected to the output of the oscillator. The short circuit is made movable with respect to the position of the avalanche diode and the variable capacitance is made adjustable.，下面是Compact, high-power, high-efficiency silicon avalanche diode l-band oscillator专利的具体信息内容。

权利要求

1. An avalanche diode oscillator comprising an avalanche diode: and a transmission line structure including a first section having a first characteristic impedance and having one end thereof shortcircuited, a second section having a second characteristic impedance and having one end thereof serially connected to the other end of said first section, a third section having a third characteristic impedance and having one end thereof serially connected to the other end of said second section with the other end of said section being connected to the output of said oscillator, said second characteristic impedance being significantly higher than either said first or third characteristic impedance, a lumped capacitance coupled across said second section at a first given point intermediate the ends thereof, and an additional section including a cavity portion in which is situated said diode coupled to said first section at a second given point intermediate the ends thereof, said additional section being adapted to be coupled to an energization source for said oscillator, whereby said oscillator oscillates at a frequency and with a power determined by the value of a first distance which exists between said shortcircuited end of said first section and said second given point, the value of a second distance which exists between said second given point and said first given point, and the value of said lumped capacitance.

2. The oscillator defined in claim 1, wherein the respective values of said first and second distance are both adjustable and the value of said capacitance is variable.

3. The oscillator defined in claim 1, wherein said additional section is adapted to be coupled to a pulse source.

4. The oscillator defined in claim 1, wherein said cavity portion includes RF bypass means.

5. The oscillator defined in claim 1, wherein said first and third characteristic impedances are substantially equal to each other.

6. The oscillator defined in claim 1, wherein the diameter of outer conductor of all of said three sections are equal and the diameter of inner conductor of said second sectIon is significantly smaller than the diameter of inner conductor of either of said first or third sections.

7. The oscillator defined in claim 6, wherein the diameter of inner conductor of said first and third sections are equal.

8. The oscillator defined in claim 1, wherein all of said sections of said structure are coaxial.

9. The oscillator defined in claim 8, wherein said transmission line structure is an L-band transmission line structure, whereby said oscillator operates in said L-band.

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Compact, high-power, high-efficiency silicon avalanche diode l-band oscillator

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