Device for generating microwave oscillations专利检索-耿氏二极管二极管真空电子管电子零件及设备专利检索查询-专利查询网

Device for generating microwave oscillations

阅读：1015发布：2020-11-02

专利汇可以提供Device for generating microwave oscillations专利检索，专利查询，专利分析的服务。并且A microwave oscillator including two semiconductor devices of a kind which can be switched between two state or which becomes unstable or exhibits negative resistance under the effect of an external electric field exceeding a given threshold value. The two semiconductor devices are mounted within a microwave resonant cavity and are connected in series between the poles of a dc bias voltage source. The common junction point between the semiconductor devices is ac-coupled to the microwave cavity so that the semiconductor devices are driven in push-pull by the ac microwave voltages derived from the microwave cavity and superimposed upon the dc bias voltages from the voltage source. The semiconductor devices may be Gunn-diodes or avalanche diodes. The microwave resonator cavity may consist of a waveguide section provided with tuning devices or a coaxial cavity closed at one end by an end wall.，下面是Device for generating microwave oscillations专利的具体信息内容。

权利要求

1. A device for generating microwave oscillations comprising two semiconductor devices of a kind capable of being switched between two states or becoming unstable or exhibiting negative resistance when exposed to a dc voltage field or a dc current exceeding a given threshold value, a microwave resonant cavity, and a dc bias voltage source, said two semiconductor devices being mounted within said resonant cavity and connected in series between the terminals of said bias voltage source, and microwave coupling means coupling the common junction point between said semiconductor devices to the microwave field of said resonant cavity so that said two semiconductor devices are driven in pushpull by ac microwave voltages derived from said resonant cavity and superimposed upon dc bias voltages derived from said bias voltage source.

2. A device as claimed in claim 1, wherein said semiconductor devices are Gunn-diodes.

3. A device as claimed in claim 1, wherein said semiconductor devices are avalanche diodes.

4. A device as claimed in claim 1, wherein said two semiconductor devices are matched to have substantially equally large dc voltage fields.

5. A device as claimed in claim 1, comprising circuit means for determining the dc potential of the common junction point between said two semiconductor devices.

6. A device as claimed in claim 5, wherein said circuit means include a dc voltage divider connected between the terminals of said dc bias voltage source and having a tap connected to said common junction point between said semiconductor devices.

7. A device as claimed in claim 1, wherein said dc bias voltages and the Q-value of said resonant cavity are sufficiently high to prevent travelling high-field domains in said semiconductor devices from growing and determining the oscillation mode.

8. A device as claimed in claim 1, wherein said microwave resonant cavity includes a waveguide section provided with tuning means, said semiconductor devices being mounted adjacent each other on the inside of the wall in said waveguide section.

9. A device as claimed in claim 8, wherein said microwave coupling means include antenna means connected to the common junction point between said semiconductor dEvices and coupled to the electromagnetic microwave field within said waveguide section.

10. A device as claimed in claim 1, wherein said microwave resonant cavity includes a coaxial cavity having an outer tubular conductor terminated at one end of the cavity by a short-circuiting end wall and an inner central conductor terminated at a short distance from said end wall, said two semiconductor devices being mounted on the inner surface of said end wall opposite said central conductor.

11. A device as claimed in claim 9, wherein said microwave coupling means include a galvanic connection from the common junction point between said semiconductor devices to said central conductor.

12. A device as claimed in claim 1, comprising at least one additional pair of semiconductor devices arranged in a manner similar to that of said two first mentioned semiconductor devices and microwave-coupled thereto.

13. A device as claimed in claim 1, wherein said two semiconductor devices are formed by planar-technique in a common semiconductor wafer as a monolithic component with three electrodes, one of said electrodes constituting said common junction point.

说明书全文

相关专利内容

标题	发布/更新时间	阅读量
一种平面耿氏二极管及其制备方法	2020-05-13	693
一种雷达散射截面的测量装置	2020-05-16	805
一种新型平面耿氏二极管及其制备方法	2020-05-19	237
电子磁强计及磁场测量方法	2020-05-18	68
基于平面耿氏二极管的ka波段单片集成压控振荡器	2020-05-15	127
一种基于复合散热阳极的GaN平面耿氏二极管及制备方法	2020-05-11	380
基于notch结构的GaN耿氏二极管及制作方法	2020-05-14	953
REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF	2020-05-17	908
発振器	2020-05-17	84
건 다이오드 제작용 세라믹 링과 리드	2020-05-19	588

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。

申请试用

耿氏二极管热门专利

热门分类

Device for generating microwave oscillations

该功能需要专业版企业版VIP权限，您可以：