Semiconductor replacements for hot cathode vacuum and gas-filled electron tube devices
阅读：367发布：2020-11-23
专利汇可以提供Semiconductor replacements for hot cathode vacuum and gas-filled electron tube devices专利检索，专利查询，专利分析的服务。并且Semiconductor replacements for hot cathode vacuum and gas-filled electron tube devices such as diodes and thyratrons wherein an appropriate semiconductor device is coupled through a diode to each terminal of the terminal pair representing the heated cathode connections of the electron tube device. For electron tube diode replacements, the coupling device is one or more highvoltage semiconductor diodes. A resistor may be placed in parallel with each of the diodes connected to the cathode terminals so as to provide a leakage path for the reverse bias leakage current of the high-voltage diode. For thyratron replacement, the coupling device is a silicon-controlled rectifier, coupled to the grid terminal through a suitable coupling means.，下面是Semiconductor replacements for hot cathode vacuum and gas-filled electron tube devices专利的具体信息内容。
1. In a semiconductor circuit for use as a direct plug-in replacement for a hot cathode electron tube device, each having at least a first and a second cathode terminal and an anode terminal the combination comprising: first and second semiconductor diodes and a semiconductor coupling means; said first and second diodes each having first and second leads and being conductive when said first lead is at a higher voltage than said second lead; said first leads of said first and second diodes being coupled to each other and to said semiconductor coupling means; said second lead of said first diode being coupled to said first cathode terminal; said second lead of said second diode being coupled to said second cathode terminal; and, said coupling means being further coupled to said anode terminal.
2. In the circuit of claim 1, first and second resistors; said first and second leads of said first diode being coupled through said first resistor; and said first and second leads of said second diode being coupled through said second resistor.
3. In the circuit of claim 1 for use as a direct plug-in replacement for a hot cathode electron tube dIode, wherein said coupling means comprises a semiconductor diode; said coupling means having first and second leads and being conductive when said first lead is at a higher voltage than said second lead; said first lead of said coupling means being coupled to said anode terminal; and said second lead of said coupling means being coupled to said first leads of said first and second diodes.
4. In the circuit of claim 3, first and second resistors; said first and second leads of said first diode being coupled through said first resistor; and said first and second leads of said second diode being coupled through said second resistor.
5. In a semiconductor circuit for use as a direct plug-in replacement for a hot cathode electron tube diode, each having at least first and second cathode terminals and an anode terminal, the combination comprising first and second semiconductor diodes and a plurality of additional semiconductor diodes; said first and second diodes each having first and second leads and being conductive when said first lead is at a higher voltage than said second lead; said first leads of said first and second diodes being coupled to each other; said second lead of said first diode being coupled to said first cathode terminal; said second lead of said second diode being coupled to said second cathode terminal; and, each of said additional diodes being coupled in series between said anode terminal and said first leads of said first and second diodes, so as to be conductive when said anode terminal is at a higher voltage than said first leads of said first and second diodes.
6. In the circuit of claim 5, first and second resistors and additional resistors numbering one less than said additional semiconductor diodes; said first and second leads of said first diode being coupled through said first resistor; said first and second leads of said second diode being coupled through said second resistor; and, each of said additional resistors being coupled in parallel with one of said additional semiconductor diodes, thereby leaving one of said last named diodes without a resistor coupled in parallel thereto.
7. In the circuit of claim 5, first and second resistors and additional resistors numbering the same as said additional semiconductors diodes; said first and second leads of said first diode being coupled through said first resistor; said first and second leads of said second diode being coupled through said second resistor; and, each of said additional resistors being coupled in parallel with one of said additional semiconductor diodes, thereby leaving one of said additional semiconductor diodes, thereby leaving one of said last named diodes without a resistor coupled in parallel thereto.
8. In a semiconductor circuit for use as a direct plug-in replacement for a hot cathode electron tube grid controlled device, each having at least first and second cathode terminals, an anode terminal, and a grid terminal, the combination comprising first and second semiconductor diodes, a coupling means, and a silicon controlled rectifier having an anode connection, a cathode connection and a gate connection; said first and second diodes each having first and second leads and being conductive when said first lead is at a higher voltage than said second lead; said first leads of said first and second diodes being coupled to each other and to said cathode connection of said silicon controlled rectifier; said second lead of said first diode being coupled to said first cathode terminal; said second lead of said second diode being coupled to said second cathode terminal; said anode connection of said silicon controlled rectifier being coupled to said anode terminal; and said gate connection of said silicon controlled rectifier being coupled to said grid terminal through said coupling means, said coupling means being a means responsive to a signal applied to said grid terminAl for providing a gate signal to said gate connection.
9. In the circuit of claim 8, and second resistors; said first and second leads of said first diode being coupled through said first resistor; and, said first and second leads of said second diode being coupled through said second resistor.
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