专利汇可以提供Josephson field effect transistor专利检索,专利查询,专利分析的服务。并且PURPOSE: To make a superconductive critical current small so as to render an ON-OFF ratio small by a method wherein at least one or more semiconductor hetero-structures are provided to a Josephson field effect transistor.
CONSTITUTION: A superconductor electrode 102 and a gate electrode 103 are formed on a barrier layer 104. The barrier layer 104 is formed of a semiconductor whose band gap is larger than that of a well layer 105. A hetero-junction is formed at the interface between the barrier layer 104 and the well layer 105. Impurity, which is to serve as a donor or a acceptor, is doped to the barrier layer 104 more than the well layer 105 in concentration. Carriers generated from donors or acceptors inside the ionized barrier layer 104 are made to move to the well layer 105 side and change into a two-dimensional electron gas. The two-dimensional electron gas is high in mobility independently of a Coulomb scattering. By these processes, a superconductive critical current grows small and an ON-OFF ratio becomes small.
COPYRIGHT: (C)1989,JPO&Japio,下面是Josephson field effect transistor专利的具体信息内容。
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