Schottky junction in a cavity专利检索-肖特基结肖特基二极管二极管电子零件及设备专利检索查询-专利查询网

Schottky junction in a cavity

阅读：578发布：2023-07-23

专利汇可以提供Schottky junction in a cavity专利检索，专利查询，专利分析的服务。并且The invention relates to a method of manufacturing a semiconductor device having a schottky junction, for example, a schottky diode, in which a masking layer which is provided with a window is provided on a semiconductor body and at the area of the window a cavity extending to below the masking layer is provided in but not through said semiconductor body, the schottky electrode layer which extends to below the masking layer but not up to the masking layer being provided in said cavity by vapourdeposition or sputtering. The invention also relates to a semiconductor device manufactured by said method. A pressure contact is preferably provided on the schottky electrode layer.，下面是Schottky junction in a cavity专利的具体信息内容。

权利要求

1. A semiconductor device having a schottky junction comprising a semiconductor body of one conductivity type having a region which has a cavity which extends from within said region to the surface of said region, a masking layer on said surface provided with a window at said cavity, said cavity extending laterally to below said masking layer whereby the edge of said masking layer overhangs said cavity, a schottky electrode layer having a thickness smaller than the depth of said cavity and located entirely in said cavity on said region and extending below said masking layer but not up to said masking layer and means for making electrical contact with said schottky electrode layer comprising an electrical conducting member extending into said cavity and forming a contact to said schottky electrode layer.

2. A semiconductor device as claimed in claim 1, wherein a conductive layer which is insulated from the schottky electrode layer by the masking layer is provided on the masking layer.

3. A semiconductor device as claimed in claim 1, wherein the depth of the cavity exceeds 1 Mu m and the thickness of the schottky electrode layer is smaller than 1 Mu m.

4. A semiconductor device as claimed in claim 1, wherein said region is an epitaxial semiconductor layer of said conductivity type having a higher resistivity than the adjoining part of said semiconductor body.

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