Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor
专利汇可以提供Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor专利检索，专利查询，专利分析的服务。并且A method of making a surface barrier diode, also known as a Schottky diode, having a hypersensitive voltage variable capacitance, is disclosed. The surface barrier diode structure comprises a silicon wafer of n conductivity having an n-type epitaxial layer which is oxidized on its outer surface to form a silicon oxide layer overlaying the epitaxial n-region of the wafer. The silicon oxide coating is relatively thin, as of less than 5000 A, and is formed relatively quickly, i.e., in less than 20 minutes at a temperature within the range of 1150* to 1250* C in order to produce a hypersensitive n impurity accumulation layer immediately adjacent to and underlying the oxide coating. A hole is then opened through the silicon oxide layer and a metal electrode, as of chromium, is deposited directly upon the hypersensitive n region to form the rectifying junction of the diode. The surface barrier diode (Schottky diode) exhibits a hypersensitive voltage variable capacitance effect where ''''hypersensitive voltage variable capacitance'''' means that the capacitance is approximately inversely proportional to the first power of the applied voltage as contrasted with normal voltage variable capacitance effects in PN junction devices wherein the capacitance is approximately inversely proportional to the 1/2 or 1/3 power of the applied voltage.，下面是Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 源-漏复合场板垂直型电力电子器件 | 2020-05-11 | 593 |
| 带有沟槽肖特基二极管和异质结栅极的碳化硅屏蔽型MOSFET | 2020-05-11 | 686 |
| 一种基于铟铝锌氧化物的肖特基二极管及其制备方法 | 2020-05-08 | 388 |
| 基于栅场板和漏场板的垂直型功率器件及其制作方法 | 2020-05-08 | 605 |
| 阈值开关器件及其制造方法以及电子设备 | 2020-05-11 | 58 |
| 一种有源偏置太赫兹谐波混频器 | 2020-05-08 | 640 |
| 一种材料结构倒置型异质衬底肖特基二极管电路制作方法 | 2020-05-08 | 884 |
| 具有加强结构的边缘终端装置 | 2020-05-11 | 679 |
| 一种肖特基混合阳极二极管的电极导片冲压装置 | 2020-05-11 | 509 |
| 一种碳化硅结势垒肖特基二极管 | 2020-05-08 | 108 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
