Transferred electron devices专利检索-肖特基结肖特基二极管二极管电子零件及设备专利检索查询-专利查询网

Transferred electron devices

阅读：937发布：2023-07-31

专利汇可以提供Transferred electron devices专利检索，专利查询，专利分析的服务。并且A transferred electron device, such as an oscillator, comprises a body of semiconductor material exhibiting the transferred electron effect, a cathode on the body comprising a region of metal giving good ohmic contact with the body and an anode on the body giving efficient extraction of current carriers and consisting of material other than a metal which would give good ohmic contact. The anode may be an n region of semiconductor or a Schottky barrier diode. The structure is suited to higher frequency operation with larger physical device dimensions.，下面是Transferred electron devices专利的具体信息内容。

权利要求

1. A transferred electron device of the transverse structure type comprising a semi-insulating substrate of semiconductor material selected from the group of materials exhibiting the transferred electron effect, an epitaxial layer of n-type semiconductor material deposited on a surface of said substrate, the material of said epitaxial layer being selected from said group of materials; an anode and a cathode formed in spaced relationship to one another on said epitaxial layer, said cathode comprising a region of high conductivity semiconductor material and a low ohmic metal electrode disposed on the surface of said epitaxial layer between said anode and cathode such that said metal electrode overlaps the juncture between said region of high conductivity semiconductor material and said epitaxial layer, said anode being fabricated of a material different from the metal of said metal electrode and having poorer ohmic contact to said epitaxial layer than is exhibited by said metal electrode, said anode being operative to effect efficient extraction of current carriers from said epitaxial layer and consisting of a material selected from the group of materials consisting of highly conductive semiconductor material and material of the type forming a Schottky barrier with said epitaxial layer.

2. A transferred electron device as claimed in claim 1 comprising a further electrode disposed on the surface of said epitaxial layer between said anode and said cathode, said further electrode comprising a further region of metal giving good ohmic contact with said epitaxial layer and a highly conductive semiconductor region adjacent a part of said further region of metal.

3. A transferred electron device as claimed in claim 1 and comprising a plurality of further electrodes disposed in spaced relation to one another on the surface of said epitaxial layer between, and in spaced relation to, said anode and said cathode, each of said further electrodes comprising a region of high conductivity semiconductor material and a low ohmic metal layer disposed on the surface of said epitaxial layer in overlapping relation to the juncture between its associated region of high conductivity semiconductor material and said epitaxial layer.

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