专利汇可以提供Semiconductor device having many fold iv characteristics专利检索,专利查询,专利分析的服务。并且A semiconductor diode having multiple Voltage characteristics and its method of fabrication is disclosed. When a voltage is applied in the forward direction to the diode, at some threshold, the current switches to a higher value of current. A decrease of the voltage causes a decrease in the current and, after a reverse voltage applied, reverse current values of increasing magnitude are obtained until a threshold is reached. When the threshold is reached, the diode switches from a high value of reverse current to a lower value of reverse current. A decrease in the reverse voltage to zero, reduces the current to zero and, increasing the voltage in the forward direction starts the above-described cycle over again. By adjusting the forward and reverse voltages, switching may occur at values higher than the thresholds and a family of voltage-current characteristics is obtained. A typical device consists of n-conductivity type gallium arsenide into which a region of deep centers has been diffused. A typical deep center of oxygen. A semiconductor junction which is alloyed, diffused or of the Schottky barrier type is formed with the deep center region. Where the junction formed is of the alloyed type, for example, an indium-zinc alloy may be used. Finally, an ohmic contact of gold-tin is applied to the semiconductor body. Forward voltages in the neighborhood of 1 volt provide switching in the forward direction while reverse voltages of as little as 3 volts cause switching in the reverse direction. A diode fabrication technique is also disclosed.,下面是Semiconductor device having many fold iv characteristics专利的具体信息内容。
标题 | 发布/更新时间 | 阅读量 |
---|---|---|
栅漏电模型的优化方法及基于其的高电子迁移率器件模型 | 2020-05-08 | 936 |
基于弧形源场板和弧形漏场板的垂直型功率器件及其制作方法 | 2020-05-11 | 537 |
一种基于铁电栅调控的肖特基二极管及其制备方法 | 2020-05-11 | 357 |
一种动态抑制功率半导体器件关断过电压的电路 | 2020-05-08 | 662 |
基于SiC功率器件的全桥LLC谐振型等离子体电源 | 2020-05-11 | 323 |
一种基于铟铝锌氧化物的肖特基二极管及其制备方法 | 2020-05-08 | 388 |
采用存储器单元的3D存储器阵列 | 2020-05-11 | 924 |
二极管 | 2020-05-08 | 242 |
一种增强型碳化硅MOSFET器件及其制造方法 | 2020-05-08 | 494 |
一种基于表面等离激元共振的光电探测器 | 2020-05-08 | 165 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台,是提供专利分析,专利查询,专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据,免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析,涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度,系统通过AI智能系统对图表进行解读,只需1分钟,一键生成行业专利分析报告。