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Method of making junction diodes

阅读:360发布:2023-10-02

专利汇可以提供Method of making junction diodes专利检索,专利查询,专利分析的服务。并且A method of making a diode with a Shottky junction, including depositing a metal film on the semiconductor and then simultaneously growing an oxide about the metal and forming an alloy junction of the metal and semiconductor.,下面是Method of making junction diodes专利的具体信息内容。

1. A METHOD OF MAKING A DIODE WITH A SHOTTKY BARRIER RECTIFYING CONTACT, INCLUDING THE STEPS OF: DEPOSITING A METAL ON A PORTION OF A SURFACE OF A SEMICONDUCTOR; AND GROWING A SEMICONDUCTOR OXIDE LAYER ON THE SEMICONDUCTOR SURFACE ABOUT SAID PORTION AND SIMULTANEOUSLY FORMING AN ALLOY OF THE METAL AND SEMICONDUCTOR AT SAID PORTION PRODUCING THE RECTIFYING CONTACT AT THE METAL AND SEMICONDUCTOR ALLOY JUNCTION.
2. The method of claim 1 including the step of etching the semiconductor to form a mesa defining said portion.
3. The method of claim 1 wherein the metal is platinum and the semiconductor is n type silicon.
4. The method of claim 1 wherein the metal is rhodium and the semiconductor is silicon.
5. The method of claim 1 including the steps of: applying an ohmic contact to the semiconductor; and applying a terminal lead to the metal.
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