专利汇可以提供Wafer polishing method专利检索,专利查询,专利分析的服务。并且An apparatus and method of polishing a substrate is described. The polishing includes: rotating a substrate; pressing a first polishing tool against an edge portion of the substrate to polish the edge portion; and pressing a second polishing tool against the edge portion of the substrate to polish the edge portion. The second polishing tool is located more inwardly than the first polishing tool with respect to a radial direction of the substrate. The first polishing tool has a polishing surface rougher than a polishing surface of the second polishing tool.,下面是Wafer polishing method专利的具体信息内容。
What is claimed is:
This application claims priority to Japanese Patent Application No. 2013-015937 filed Jan. 30, 2013, the entire contents of which are hereby incorporated by reference.
A polishing apparatus, which has a polishing tool (e.g., a polishing tape or a fixed abrasive), is used for polishing a peripheral portion of a wafer. This type of polishing apparatus is configured to bring the polishing tool into contact with the peripheral portion of the wafer, while rotating the wafer, to thereby polish the peripheral portion of the wafer. In this specification, the peripheral portion of the wafer is defined as a region including a bevel portion which is the outermost portion of the wafer and a top edge portion and a bottom edge portion located radially inwardly of the bevel portion.
In a fabrication process of SOI (Silicon on Insulator) substrate, there is a need to form a vertical surface and a horizontal surface on the edge portion of the wafer W, as shown in
A cross section of the edge portion as illustrated in
In order to increase a throughput of the polishing apparatus shown in
In an embodiment an apparatus is used to polish a substrate. This apparatus is used to rotate a substrate; press a first polishing tool against an edge portion of the substrate to polish the edge portion; and press a second polishing tool against the edge portion of the substrate to polish the edge portion. The second polishing tool is preferably located more inwardly than the first polishing tool with respect to a radial direction of the substrate. The first polishing tool has a polishing surface more abrasive than a polishing surface of the second polishing tool.
According to the above-described embodiment, the first polishing tool first polishes the edge portion of the substrate. Therefore, a contact area between the second polishing tool and the edge portion becomes small, and as a result pressure of the second polishing tool applied to the edge portion is increased. Accordingly, the second polishing tool having a finer polishing surface than the first polishing tool can polish the edge portion of the substrate at a high polishing rate (i.e., a high removal rate). Moreover, the second polishing tool having the fine polishing surface can form a smooth vertical surface on the edge portion of the substrate.
An embodiment will now be described in detail with reference to the drawings.
An arrangement of the two polishing units 2A, 2B is symmetrical about the wafer W held by the substrate holder 1. The first polishing unit 2A is configured to place a first polishing tape 3A, which is a first polishing tool, in sliding contact with the edge portion of the wafer W to thereby polish the edge portion, and the second polishing unit 2B is configured to place a second polishing tape 3B, which is a second polishing tool, in sliding contact with the edge portion of the wafer W to thereby polish the edge portion. The first polishing tape 3A has a polishing surface rougher than a polishing surface of the second polishing tape 3B. During polishing of the wafer W, the polishing liquid is supplied from the polishing liquid supply mechanism 4 onto the central portion of the wafer W. Examples of the polishing liquid to be used include pure water. Instead of the polishing tape, a grindstone (or a fixed abrasive) may be used as the first polishing tool and/or the second polishing tool.
Since the first polishing unit 2A and the second polishing unit 2B have the same structure, the first polishing unit 2A will be described below. The first polishing unit 2A includes a polishing-tape support mechanism (a polishing-tool support mechanism) 5 for supporting the first polishing tape 3A, a pressing pad (a pressing member) 7 for pressing the first polishing tape 3A downwardly against the edge portion of the wafer W, a vertically moving mechanism 9 for moving the pressing pad 7 in a direction perpendicular to the wafer surface, a pressing-pad moving mechanism (a pressing-member moving mechanism) 10 for moving the pressing pad 7 and the vertically moving mechanism 9 in a radial direction of the wafer W, and a tape moving mechanism (a polishing-tool moving mechanism) 11 for moving the first polishing tape 3A and the polishing-tape support mechanism 5 in the radial direction of the wafer W.
The pressing-pad moving mechanism 10 and the tape moving mechanism 11 are operable independently of each other. Therefore, a relative position of the pressing pad 7 and the first polishing tape 3A in the radial direction of the wafer W can be adjusted by the pressing-pad moving mechanism 10 and the tape moving mechanism 11. A combination of pneumatic cylinders, a combination of a servomotor and a ball screw, or the like can be used as the vertically moving mechanism 9, the pressing-pad moving mechanism 10, and the tape moving mechanism 11.
The polishing-tape support mechanism 5 includes a feeding reel 12 for feeding the first polishing tape 3A to the pressing pad 7 and a take-up reel 14 for taking up the first polishing tape 3A. The first polishing tape 3A extends from the feeding reel 12 to the take-up reel 14 via the pressing pad 7. The first polishing tape 3A is supported by the polishing-tape support mechanism 5 such that the polishing surface of the first polishing tape 3A lies parallel to the surface of the wafer W and the polishing surface faces the edge portion of the wafer W.
One surface (a lower surface) of the first polishing tape 3A constitutes the polishing surface having abrasive grains fixed thereto. The first polishing tape 3A is a long polishing tool, and is disposed along a tangential direction of the wafer W, The pressing pad 7 is a pressing member for pressing the first polishing tape 3A against the edge portion of the wafer W, and is disposed above the edge portion of the wafer W. The first polishing tape 3A is located between the pressing pad 7 and the edge portion of the wafer W. A tape stopper 17 for restricting an outward movement of the first polishing tape 3A is fixed to a bottom of the pressing pad 7. This tape stopper 17 may be omitted.
As shown in
Further, as shown in
Each pressing pad 7 has a wafer pressing surface (i.e., a substrate pressing surface) which is a horizontal surface parallel to the wafer surface. The polishing units 2A, 2B individually form the vertical surfaces and the horizontal surfaces on the edge portion of the wafer W by pressing the polishing tapes 3A, 3B against the edge portion of the wafer W with the respective horizontal wafer pressing surfaces. The polishing surfaces of the polishing tapes 3A, 3B when contacting the wafer W are parallel to the surface of the wafer W.
As can be seen from
In order to allow the first polishing tape 3A to polish the edge portion of the wafer ahead of the second polishing tape 3B throughout the polishing of the wafer, a removal rate (or a polishing rate) of the edge portion polished by the first polishing tape 3A is preferably higher than a removal rate (or a polishing rate) of the edge portion polished by the second polishing tape 3B.
In a fabrication process of an SOI (Silicon on Insulator) substrate, the vertical surface and the horizontal surface, which have been formed by the first polishing tape 3A, are removed by a grinder. More specifically, as illustrated in
The previous description of embodiments is provided to enable a person skilled in the art to make and use the present invention. Moreover, various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles and specific examples defined herein may be applied to other embodiments. Therefore, the present invention is not intended to be limited to the embodiments described herein but is to be accorded the widest scope as defined by limitation of the claims and equivalents.
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