Back gate bias voltage control of oxide semiconductor transistor
专利汇可以提供Back gate bias voltage control of oxide semiconductor transistor专利检索，专利查询，专利分析的服务。并且To stably control a threshold voltage of a functional circuit using an oxide semiconductor. A variable bias circuit, a monitoring oxide semiconductor transistor including a back gate, a current source, a differential amplifier, a reference voltage source, and a functional circuit which includes an oxide semiconductor transistor including a back gate are provided. The current source supplies current between a source and a drain of the monitoring oxide semiconductor transistor to generate a gate-source voltage in accordance with the current. The differential amplifier compares the voltage with a voltage of the reference voltage source, amplifies a difference, and outputs a resulting voltage to the variable bias circuit. The variable bias circuit is controlled by an output of the differential amplifier and supplies voltage to the back gate of the monitoring oxide semiconductor transistor and the back gate of the oxide semiconductor transistor included in the functional circuit.，下面是Back gate bias voltage control of oxide semiconductor transistor专利的具体信息内容。
The invention claimed is:
The present invention relates to a semiconductor device which includes an oxide semiconductor transistor including a back gate, particularly, a semiconductor device having a function of automatically controlling voltage applied to a back gate. The present invention relates to an electronic device including the semiconductor device.
Memories such as an SRAM and a DRAM have already been used in a variety of electronic devices. For example, an SRAM or a DRAM is widely used as a cache memory. A cache memory is used in a central processing unit (CPU), a hard disk drive (HDD), a solid state drive (SSD), or the like. A cache memory is provided to input or output data to a logic circuit quickly.
Although an example of nonvolatile memories includes a flash memory, response speed of a flash memory is low. As a novel memory, a memory using an oxide semiconductor has been proposed.
The off-state current of a transistor using an oxide semiconductor is extremely low. For example, the off-state current per micrometer of the channel width at 85° C. is less than or equal to 100 yA (1 yA (yoctoampere) is 1×10−24 A). Thus, a memory element which can store data for a long period can be formed using a storage capacitor and an oxide semiconductor transistor (e.g., Patent Document 1).
A technique of controlling a threshold voltage of an oxide semiconductor transistor is still under development. In the case where the threshold voltage is shifted in the negative direction, the off-state current is increased at Vg=0 V. Owing to the shift in the threshold voltage, a data retention period is shortened. Therefore, in view of this point, the technique of controlling a threshold voltage is required for lengthening a data retention period.
[Patent Document 1] Japanese Published Patent Application No. 2011-181167
Since an oxide semiconductor transistor has an extremely low off-state current, the oxide semiconductor transistor can be used for a nonvolatile memory utilizing such a characteristic. On the other hand, controlling a threshold voltage of an oxide semiconductor transistor is difficult. As a method for controlling a threshold voltage, the following method is known: a back gate is formed in an oxide semiconductor transistor and voltage thereof is controlled so that a threshold voltage is changed. However, in the case where a back gate voltage is fixed, a problem of variations in transistor characteristics or a change in threshold voltages of transistors caused by temperature characteristics occurs.
An object of the present invention is to provide a semiconductor device having a function of applying an appropriate potential to a back gate of an oxide semiconductor transistor automatically. Another object of the present invention is to provide an electronic device including a semiconductor device having a function of applying an appropriate potential to a back gate of an oxide semiconductor transistor automatically.
Another object of the present invention is to provide a semiconductor device having a stable threshold voltage of an oxide semiconductor transistor even when a usage environment of the semiconductor device, e.g., temperature, is changed. Another object of the present invention is to provide a semiconductor device having a stable threshold voltage of an oxide semiconductor transistor even when a variation in transistor characteristics occurs in a manufacturing process. Another object of the present invention is to provide a semiconductor device in which an off-state current can be controlled stably.
One embodiment of the invention disclosed in this specification achieves at least one of the above objects.
A semiconductor device of one embodiment of the present invention includes a variable bias circuit, a first transistor including a back gate, a current source, a differential amplifier, a reference voltage source, and a functional circuit. The functional circuit includes a second transistor including a back gate. The first transistor and the second transistor include an oxide semiconductor. The current source supplies current between a drain and a source of the first transistor to generate a gate-source voltage in accordance with the current. The differential amplifier compares the gate-source voltage of the first transistor and a voltage of a reference voltage source, amplifies a difference, and outputs the resulting voltage. The variable bias circuit is controlled by the output voltage or an output current of the differential amplifier and supplies voltage to the back gate of the first transistor and the back gate of the second transistor.
In the semiconductor device of one embodiment of the present invention, the variable bias circuit may include a pulse width modulation (PWM) wave generation circuit.
In the semiconductor device of one embodiment of the present invention, the functional circuit may be a memory circuit.
In the semiconductor device of one embodiment of the present invention, the functional circuit may be a register circuit.
By the control operation of the present invention, a semiconductor device in which a shift in the threshold voltage of an oxide semiconductor transistor caused by temperature or a variation in transistor characteristics is less likely to occur can be provided. A semiconductor device in which an off-state current of an oxide semiconductor transistor can be stably controlled without being affected by temperature or a variation in transistor characteristics can be provided.
A memory device or a semiconductor device with less power consumption can be provided. A memory device or a semiconductor device capable of high speed operation can be provided.
In the accompanying drawings:
Examples of embodiments of the present invention will be described below with reference to the drawings. Note that the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description in the following embodiments.
A transistor is a kind of semiconductor element and can achieve amplification of current or voltage, switching operation for controlling conduction or non-conduction, or the like. A transistor in this specification includes an insulated-gate field effect transistor (IGFET) and a thin film transistor (TFT).
Note that the position, the size, the range, or the like of each structure illustrated in drawings and the like is not accurately represented in some cases for easy understanding. Therefore, the disclosed invention is not necessarily limited to the position, the size, the range, or the like disclosed in the drawings and the like.
In this specification and the like, ordinal numbers such as “first”, “second”, and “third” are used in order to avoid confusion among components, and the terms do not mean limitation of the number of components.
Components will be described below. The variable bias circuit 101 is a voltage-controlled voltage source which is controlled by an input voltage and generates voltage to be applied to a back gate (back gate control voltage Vbg). The transistor 102 for monitoring a threshold voltage is an oxide semiconductor transistor having a structure similar to that of an oxide semiconductor transistor including a back gate which is used as the functional circuit, and it is preferable that these transistors have similar gate lengths and gate widths as well as structures. The current source 103 is a constant current source, and a change due to temperature and power source voltage is preferably small. The reference voltage source 105 is a constant voltage source and is preferably less likely to be affected by temperature and power source voltage. The differential amplifier 104 amplifies a voltage difference between a non-inverting input voltage and an inverting input voltage and outputs the resulting voltage. The differential amplifier 104 may be used for a current output and the variable bias circuit 101 may be used for a current input.
The operation of the present invention is described below. An n-channel oxide semiconductor transistor is assumed. Since the polarity is reversed in the case of a p-channel transistor, the following operation of the transistor is also reversed. In the case where a voltage applied to the back gate is positive in the n-channel transistor, the threshold voltage of the transistor is shifted in the negative direction, and in the case where the voltage applied to the back gate is negative, the threshold voltage of the transistor is shifted in the positive direction. In the case where an oxide semiconductor is used for a memory, the threshold voltage is preferably shifted in the positive direction sufficiently. This is because when the threshold voltage is negative, current flows through a drain even at Vg=0 V and it is difficult to retain data in the case where an oxide semiconductor is used for a memory.
When the voltage of the reference voltage source 105 is Vref and the gate voltage Vg of the oxide semiconductor transistor 102 is lower than Vref, the differential amplifier 104 operates so that the output voltage is increased. Owing to this voltage, the variable bias circuit 101 operates so that the back gate control voltage Vbg is shifted in the negative direction. When Vbg is shifted in the negative direction, the threshold voltage of the oxide semiconductor transistor 102 is increased, so that Vg of the oxide semiconductor transistor 102 is increased. In the case where the gate voltage Vg of the oxide semiconductor transistor 102 is higher than Vref, the differential amplifier 104 operates so that the output voltage is decreased. Owing to this voltage, the variable bias circuit 101 operates so that the back gate control voltage Vbg is shifted in the positive direction. When Vbg is shifted in the positive direction, the threshold voltage of the oxide semiconductor transistor 102 is decreased, so that Vg of the oxide semiconductor transistor 102 is decreased. In this manner, the circuit operates so that negative feedback is performed.
As described first, the oxide semiconductor transistors 102 and 107 have the same structure and thus have similar electrical characteristics. By controlling the characteristics of the oxide semiconductor transistor 102, the characteristics of the oxide semiconductor transistor 107 to which the same back gate control voltage Vbg is applied is also controlled. In this manner, threshold voltages of oxide semiconductor transistors included in the functional circuit 106 can be controlled and off-state currents thereof can also be controlled.
The PWM wave generation circuit 301 is controlled by the output voltage of the differential amplifier 104; when the output voltage of the differential amplifier 104 is increased, a period during which the output of the PWM wave generation circuit 301 is at a high level is short, and when the output voltage of the differential amplifier 104 is decreased, a period during which the output of the PWM wave generation circuit 301 is at a low level is short. The output of the PWM wave generation circuit 301 is connected to a gate of the switch transistor 307 through the level shifter 305, and is connected to a gate of the switch transistor 306 through the inverter 303 and the level shifter 304. One of a source and a drain of the switch transistor 306 is connected to the constant voltage circuit 302. The other of the source and the drain of the switch transistor 306 is connected to one terminal of the resistor 308 and one of a source and a drain of the switch transistor 307.
The other of the source and the drain of the switch transistor 307 is connected to a low-potential power source VSS1. The other terminal of the resistor 308 is connected to back gates of the transistors 102 and 107 and the capacitor 309. A connection point A is alternately connected to the constant voltage circuit 302 and VSS1, and a low-pass filter is formed using the resistor 308 and the capacitor 309; thus, a voltage substantially equal to the DC voltage is input to the back gates of the transistors 102 and 107. In accordance with the ratio of the operations of the switch transistors 306 and 307, a voltage between the voltage of the constant voltage circuit 302 and VSS1 is applied as the back gate voltage.
In the case of an oxide semiconductor transistor, the threshold voltage is likely to be shifted in the negative direction. To overcome that, the threshold voltage is often controlled by applying a negative voltage to the back gate. Thus, in the case where VSS1 is set to GND, the constant voltage circuit 302 supplies a negative voltage in many cases. Generating a negative voltage using a bulk silicon transistor might be difficult in terms of isolation. In that case, the constant voltage circuit 302 and the switch transistors 306 and 307 are preferably formed using an oxide semiconductor transistor.
The PWM wave generation circuit 301 outputs a high signal in a period during which the voltage of the triangular wave is higher than the output voltage of the differential amplifier 104. The PWM wave generation circuit 301 outputs a low signal in a period during which the voltage of the triangular wave is lower than the output voltage of the differential amplifier 104. In the case where the output signal of the PWM wave generation circuit 301 is high, the switch transistor 307 is turned on and the connection point A is connected to VSS1. In the case where the output signal of the PWM wave generation circuit 301 is low, the switch transistor 306 is turned on and the connection point A is connected to the output of the constant voltage circuit 302. At the connection point A, two potentials are alternately generated in this manner, and a smoothed voltage is input to the back gate through the low-pass filter formed using the resistor 308 and the capacitor 309. In this manner, a voltage is applied to the back gate so that the threshold voltage of the oxide semiconductor transistor 102 is always a particular voltage, and a threshold voltage stable to temperature can be obtained.
A gate of the write transistor 201 is connected to a word line 204, and one of a source and a drain of the write transistor 201 is connected to a gate of the read transistor 202 and one electrode of the storage capacitor 203. The other electrode of the storage capacitor 203 is connected to a capacitor word line 205. A source of the read transistor 202 is connected to a source line 206. A drain of the read transistor 202 and the other of the source and the drain of the write transistor 201 are connected to a bit line 207. A back gate of the write transistor 201 is connected to a back gate bias line 208. The word line 204, the capacitor word line 205, and the source line 206 are controlled by a driver circuit 209, and the bit line 207 is controlled by a driver circuit 210.
The operation of the memory circuit in this embodiment is described below. The write operation in this embodiment is performed as follows. First, the case where a high signal is stored in the memory cell 200 is described. A high signal is supplied from the driver circuit 210 to the bit line 207. Next, the word line 204 is set to a high level, and the capacitor word line 205 is set to a low level. When the word line 204 is set to a high level, the write transistor 201 is turned on and data of the bit line 207 is stored at a node N. In this case, the source line 206 remains low so that the read transistor 202 does not operate. In rows in which writing is not performed, the word lines 204 are set to a low level and the capacitor word lines 205 are set to a high level.
Next, the case where a low signal is stored in the memory cell 200 is described. A low signal is supplied from the driver circuit 210 to the bit line 207. Next, the word line 204 is set to a high level, and the capacitor word line 205 is set to a low level. When the word line 204 is set to a high level, the write transistor 201 is turned on and data of the bit line 207 is stored at the node N. In this case, the source line 206 remains low so that the read transistor 202 does not operate. In rows in which writing is not performed, the word lines 204 are set to a low level and the capacitor word lines 205 are set to a high level. Thus, desired data is written to the node N.
The case where data is read from the memory cell 200 is described. First, the bit line 207 is precharged to an intermediate potential. Next, the capacitor word line 205 is set to a low level, and the source line 206 is set to a high level. Since the read transistor 202 is not turned on when a high signal is stored at the node N, the potential of the bit line 207 is not changed from the precharge potential. When a low signal is stored at the node N, the read transistor 202 is turned on and current flows from the source line 206 to the bit line 207, so that the potential of the bit line 207 becomes higher than the precharge potential. By detecting the increased amount, whether the potential of the node N is low or not can be determined. In such a manner, data stored in the memory cell 200 can be read.
In rows in which reading is not performed, the capacitor word lines 205 are set to a high level and the source lines 206 are set to a low level, so that the read transistors 202 in the rows in which reading is not performed can be turned off; thus, reading can be selectively performed.
In the memory circuit, the assurance of memory properties depends on the length of a period during which charges can be held at the node N. A nonvolatile memory requires data holding for 10 years, and the retention characteristic is an important factor.
There are four possibilities that charges are leaked. First, current flows to the word line 204 through a gate insulating film of the write transistor 201. Secondly, current flows to the capacitor word line 205 through the storage capacitor 203. Thirdly, current flows to the bit line 207 or the source line 206 through a gate insulating film of the write transistor 201. Fourthly, current flows to the bit line 207 as a drain current of the write transistor 201.
The first to third possibilities can be excluded by increasing the thickness of the insulating films. To exclude the fourth possibility, the write transistor 201 needs to be definitely turned off, a drain-source current needs to be sufficiently low at Vg=0 V, and the threshold voltage of the write transistor 201 needs to be controlled. The present invention is effective as a measure against them, and a potential such that the write transistor 201 can be sufficiently turned off can be applied to the back gate bias line 208 by the variable bias circuit 101.
The operation of the nonvolatile register circuit is described below. When both of a write signal W and a read signal Re are at a low level, the multiplexer 608 outputs an output of the NAND 603 to an input of the clock inverter 604 and an input of the switch 605. Furthermore, the oxide semiconductor transistor 610 is turned off. Thus, a nonvolatile portion does not contribute to the operation.
In data writing, the write signal W is set to a high level, and an output of the multiplexer 608 is written to the capacitor 614. Even when the power is turned off after the write signal W is set to a low level, the data is held in the capacitor 614.
When the power is turned on again and the read signal Re is set to a high level, the data is read from the capacitor 614 and input to the register circuit. The details thereof are described below. In the case where a high signal is stored in the capacitor 614, the transistor 613 is turned on and a drain thereof is changed to a low level. An inverter including the transistors 611 and 612 operates, and a high signal is input to the multiplexer 608 through the inverter 609. When the read signal Re is at a high level, the multiplexer 608 outputs an output of the inverter 609 to the input of the clock inverter 604 and the input of the switch 605; thus, the high signal is returned to the register circuit.
In the case where a low signal is stored in the capacitor 614, the transistors 613 and 612 are turned off. When the power is turned on, the transistor 611 is turned on for a moment, and the potential of the capacitor 615 is set to a high level. A low signal is input to the multiplexer 608 through the inverter 609. Then, the multiplexer 608 outputs a low signal, and the low signal is returned to the register circuit. In such a manner, the nonvolatile register circuit operates. In a CMOS circuit included in the inverter, the NAND, and the like, the p-channel transistor may be a Si transistor and the n-channel transistor may be an oxide semiconductor transistor. In an oxide semiconductor transistor, short-channel effects are less likely to occur, and when the gate length L is miniaturized, a decrease in mobility and a variation in threshold voltages are less likely to occur. The n-channel transistor portion of the CMOS circuit is formed using an oxide semiconductor transistor; thus, frequency characteristics and the like can be improved in miniaturization, compared to the case where the CMOS circuit is formed using only Si transistors. Furthermore, in the case where the CMOS circuit is formed using an oxide semiconductor transistor, the p-channel transistors and the n-channel transistors can be stacked, which enables a reduction in area. In addition, steps such as a doping step for the n-channel transistors are unnecessary, so that manufacturing steps can be reduced.
In a manner similar to that of the embodiment, to retain data for a long period, the oxide semiconductor transistor 610 needs to be sufficiently turned off at Vg=0 V, and a threshold voltage thereof needs to be set to a high level. In
As described above, in the present invention, the oxide semiconductor transistors 102 and 107 have similar electrical characteristics when having the same structure. By controlling the characteristics of the oxide semiconductor transistor 102, the characteristics of the oxide semiconductor transistor 107 to which the same back gate control voltage Vbg is applied are also controlled. In this manner, a threshold voltage of an oxide semiconductor transistor included in the functional circuit 106 can be controlled, and an off-state current thereof can also be controlled.
This embodiment can be implemented in combination with any of the other embodiments as appropriate.
In this embodiment, an oxide semiconductor layer that can be used as a semiconductor layer of the write transistor (hereinafter, referred to as a first transistor in some cases) with low off-state current described in the above embodiment is described. An oxide semiconductor layer described below can be used as channel layers of transistors other than the first transistor for writing, e.g., a read transistor (hereinafter, referred to as a second transistor in some cases) or transistors used in various circuits in
An oxide semiconductor used for a channel formation region in the semiconductor layer of the first transistor preferably contains at least indium (In) or zinc (Zn). In particular, In and Zn are preferably contained. A stabilizer for strongly bonding oxygen is preferably contained in addition to In and Zn. As a stabilizer, at least one of gallium (Ga), tin (Sn), zirconium (Zr), hafnium (Hf), and aluminum (Al) may be contained.
As another stabilizer, one or plural kinds of lanthanoid such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu) may be contained.
As the oxide semiconductor used for the semiconductor layer of the first transistor, for example, any of the following can be used: indium oxide, tin oxide, zinc oxide, an In—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, an In—Ga-based oxide, an In—Ga—Zn-based oxide (also referred to as IGZO), an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, a Sn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide, an In—Zr—Zn-based oxide, an In—Ti—Zn-based oxide, an In—Sc—Zn-based oxide, an In—Y—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, an In—Er—Zn-based oxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide, an In—Lu—Zn-based oxide, an In—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, an In—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, an In—Sn—Hf—Zn-based oxide, and an In—Hf—Al—Zn-based oxide.
For example, an In—Ga—Zn-based oxide with an atomic ratio of In:Ga:Zn=1:1:1, 3:1:2, or 2:1:3, or an oxide with an atomic ratio close to the above atomic ratios can be used.
When the oxide semiconductor film forming the semiconductor layer contains a large amount of hydrogen, the hydrogen and the oxide semiconductor are bonded to each other, so that part of the hydrogen serves as a donor and causes generation of an electron that is a carrier. As a result, the threshold voltage of the transistor shifts in the negative direction. Therefore, it is preferable that, after formation of the oxide semiconductor film, dehydration treatment (dehydrogenation treatment) be performed to remove hydrogen or moisture from the oxide semiconductor film so that the oxide semiconductor film is highly purified to contain impurities as little as possible.
Note that oxygen in the oxide semiconductor film is also reduced by the dehydration treatment (dehydrogenation treatment) in some cases. Therefore, it is preferable that oxygen be added to the oxide semiconductor film to fill oxygen vacancies increased by the dehydration treatment (dehydrogenation treatment). In this specification and the like, supplying oxygen to an oxide semiconductor film may be expressed as oxygen adding treatment, and treatment for making the oxygen content of an oxide semiconductor film be in excess of that in the stoichiometric composition may be expressed as treatment for making an oxygen-excess state.
In this manner, hydrogen or moisture is removed from the oxide semiconductor film by the dehydration treatment (dehydrogenation treatment) and oxygen vacancies therein are filled by the oxygen adding treatment, whereby the oxide semiconductor film can be turned into an i-type (intrinsic) oxide semiconductor film or a substantially i-type (intrinsic) oxide semiconductor film which is extremely close to an i-type oxide semiconductor film. Note that “substantially intrinsic” means that the oxide semiconductor film contains extremely few (close to zero) carriers derived from a donor and has a carrier density which is 1×1017/cm3 or lower, 1×1016/cm3 or lower, 1×1015/cm3 or lower, 1×1014/cm3 or lower, or 1×1013/cm3 or lower.
In this manner, the transistor including an i-type (intrinsic) or substantially i-type oxide semiconductor film can have extremely favorable off-state current characteristics. For example, the drain current at the time when the transistor including an oxide semiconductor film is in an off-state at room temperature (approximately 25° C.) can be less than or equal to 1×10−18 A, preferably less than or equal to 1×10−21 A, further preferably less than or equal to 1×10−24 A; or at 85° C., less than or equal to 1×10−15 A, preferably less than or equal to 1×10−18 A, further preferably less than or equal to 1×10−21 A. Note that the off state of an n-channel transistor refers to a state where a gate voltage is sufficiently lower than the threshold voltage. Specifically, the transistor is off when the gate voltage is lower than the threshold voltage by 1 V or more, 2 V or more, or 3 V or more.
The oxide semiconductor film may include one or more of an oxide semiconductor having a single-crystal structure (hereinafter referred to as a single-crystal oxide semiconductor), an oxide semiconductor having a polycrystalline structure (hereinafter referred to as a polycrystalline oxide semiconductor), an oxide semiconductor having a microcrystalline structure (hereinafter referred to as a microcrystalline oxide semiconductor), and an oxide semiconductor having an amorphous structure (hereinafter referred to as an amorphous oxide semiconductor). Alternatively, the oxide semiconductor film may be formed using a CAAC-OS film. Alternatively, the oxide semiconductor film may include an amorphous oxide semiconductor and an oxide semiconductor having a crystal grain. Described below are a CAAC-OS and a microcrystalline oxide semiconductor as typical examples.
First, a CAAC-OS film is described.
The CAAC-OS film is an oxide semiconductor film having a plurality of c-axis aligned crystal parts.
In a transmission electron microscope (TEM) image of the CAAC-OS film, a boundary between crystal parts, that is, a grain boundary is not clearly observed. Thus, in the CAAC-OS film, a reduction in electron mobility due to the grain boundary is less likely to occur.
According to the TEM image of the CAAC-OS film observed in a direction substantially parallel to a sample surface (cross-sectional TEM image), metal atoms are arranged in a layered manner in the crystal parts. Each metal atom layer has a shape reflecting a surface over which the CAAC-OS film is formed (hereinafter, a surface over which the CAAC-OS film is formed is referred to as a formation surface) or a top surface of the CAAC-OS film, and is arranged in parallel to the formation surface or the top surface of the CAAC-OS film.
On the other hand, according to the TEM image of the CAAC-OS film observed in a direction substantially perpendicular to the sample surface (plan-view TEM image), metal atoms are arranged in a triangular or hexagonal configuration in the crystal parts. However, there is no regularity of arrangement of metal atoms between different crystal parts.
Note that in an electron diffraction pattern of the CAAC-OS film, spots (bright spots) having alignment are shown. For example, when electron diffraction with an electron beam having a diameter of 1 nm or more and 30 nm or less (such electron diffraction is also referred to as nanobeam electron diffraction) is performed on the top surface of the CAAC-OS film, spots are observed (see
From the results of the cross-sectional TEM image and the plan-view TEM image, alignment is found in the crystal parts in the CAAC-OS film.
Most of the crystal parts included in the CAAC-OS film each fit inside a cube whose one side is less than 100 nm. Thus, there is a case where a crystal part included in the CAAC-OS film fits inside a cube whose one side is less than 10 nm, less than 5 nm, or less than 3 nm. Note that when a plurality of crystal parts included in the CAAC-OS film are connected to each other, one large crystal region is formed in some cases. For example, a crystal region with an area of 2500 nm2 or more, 5 μm2 or more, or 1000 μm2 or more is observed in some cases in the plan-view TEM image.
A CAAC-OS film is subjected to structural analysis with an X-ray diffraction (XRD) apparatus. For example, when the CAAC-OS film including an InGaZnO4 crystal is analyzed by an out-of-plane method, a peak appears frequently when the diffraction angle (2 θ) is around 31°. This peak is derived from the (009) plane of the InGaZnO4 crystal, which indicates that crystals in the CAAC-OS film have c-axis alignment, and that the c-axes are aligned in a direction substantially perpendicular to the formation surface or the top surface of the CAAC-OS film.
On the other hand, when the CAAC-OS film is analyzed by an in-plane method in which an X-ray enters a sample in a direction substantially perpendicular to the c-axis, a peak appears frequently when 2θ is around 56°. This peak is derived from the (110) plane of the InGaZnO4 crystal. Here, analysis (φ scan) is performed under conditions where the sample is rotated around a normal vector of a sample surface as an axis (φ axis) with 2θ fixed at around 56°. In the case where the sample is a single-crystal oxide semiconductor film of InGaZnO4, six peaks appear. The six peaks are derived from crystal planes equivalent to the (110) plane. On the other hand, in the case of a CAAC-OS film, a peak is not clearly observed even when φ scan is performed with 2θ fixed at around 56°.
According to the above results, in the CAAC-OS film having c-axis alignment, while the directions of a-axes and b-axes are irregularly oriented between crystal parts, the c-axes are aligned in a direction parallel to a normal vector of a formation surface or a normal vector of a top surface. Thus, each metal atom layer arranged in a layered manner observed in the cross-sectional TEM image corresponds to a plane parallel to the a-b plane of the crystal.
Note that the crystal part is formed concurrently with deposition of the CAAC-OS film or is formed through crystallization treatment such as heat treatment. As described above, the c-axis of the crystal is aligned in a direction parallel to a normal vector of a formation surface or a normal vector of a top surface. Thus, for example, in the case where a shape of the CAAC-OS film is changed by etching or the like, the c-axis might not be necessarily parallel to a normal vector of a formation surface or a normal vector of a top surface of the CAAC-OS film.
Distribution of c-axis aligned crystal parts in the CAAC-OS film is not necessarily uniform. For example, in the case where crystal growth leading to the crystal parts of the CAAC-OS film occurs from the vicinity of the top surface of the CAAC-OS film, the proportion of the c-axis aligned crystal parts in the vicinity of the top surface is higher than that in the vicinity of the formation surface in some cases. When an impurity is added to the CAAC-OS film, a region to which the impurity is added is altered, and the proportion of the c-axis aligned crystal parts in the CAAC-OS film varies depending on regions, in some cases.
Note that when the CAAC-OS film with an InGaZnO4 crystal is analyzed by an out-of-plane method, a peak of 2θ may also be observed at around 36°, in addition to the peak of 2θ at around 31°. The peak of 2θ at around 36° indicates that a crystal having no c-axis alignment is included in part of the CAAC-OS film. It is preferable that in the CAAC-OS film, a peak of 2θ appear at around 31° and a peak of 2θ not appear at around 36°.
The CAAC-OS film is an oxide semiconductor film having low impurity concentration. The impurity is an element other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, or a transition metal element. In particular, an element that has higher bonding strength to oxygen than a metal element included in the oxide semiconductor film, such as silicon, disturbs the atomic arrangement of the oxide semiconductor film by depriving the oxide semiconductor film of oxygen and causes a decrease in crystallinity. Furthermore, a heavy metal such as iron or nickel, argon, carbon dioxide, or the like has a large atomic radius (molecular radius), and thus disturbs the atomic order of the oxide semiconductor film and causes a decrease in crystallinity when it is contained in the oxide semiconductor film. Note that the impurity contained in the oxide semiconductor film might serve as a carrier trap or a carrier generation source.
The CAAC-OS film is an oxide semiconductor film having a low density of defect states. In some cases, oxygen vacancies in the oxide semiconductor film serve as carrier traps or serve as carrier generation sources when hydrogen is captured therein.
The state in which impurity concentration is low and density of defect states is low (the number of oxygen vacancies is small) is referred to as a “highly purified intrinsic” or “substantially highly purified intrinsic” state. A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier generation sources, and thus can have a low carrier density. Thus, a transistor including the oxide semiconductor film rarely has negative threshold voltage (is rarely normally on). The highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier traps. Accordingly, the transistor including the oxide semiconductor film has little variation in electrical characteristics and high reliability. Charge trapped by the carrier traps in the oxide semiconductor film takes a long time to be released, and might behave like fixed charge. Thus, the transistor that includes the oxide semiconductor film having high impurity concentration and a high density of defect states has unstable electrical characteristics in some cases.
In a transistor including the CAAC-OS film, changes in electrical characteristics of the transistor due to irradiation with visible light or ultraviolet light are small.
Next, a microcrystalline oxide semiconductor film is described.
In an image obtained with the TEM, crystal parts cannot be found clearly in the microcrystalline oxide semiconductor film in some cases. In most cases, a crystal part in the microcrystalline oxide semiconductor film is greater than or equal to 1 nm and less than or equal to 100 nm, or greater than or equal to 1 nm and less than or equal to 10 nm. A microcrystal with a size greater than or equal to 1 nm and less than or equal to 10 nm, or a size greater than or equal to 1 nm and less than or equal to 3 nm is specifically referred to as nanocrystal (nc). An oxide semiconductor film including nanocrystal is referred to as a nanocrystalline oxide semiconductor (nc-OS) film. In an image obtained with TEM, a grain boundary cannot be found clearly in the nc-OS film in some cases.
In the nc-OS film, a microscopic region (for example, a region with a size greater than or equal to 1 nm and less than or equal to 10 nm, in particular, a region with a size greater than or equal to 1 nm and less than or equal to 3 nm) has a periodic atomic order. Note that there is no regularity of crystal orientation between different crystal parts in the nc-OS film. Thus, the orientation of the whole film is not observed. Accordingly, in some cases, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on an analysis method. For example, when the nc-OS film is subjected to structural analysis by an out-of-plane method with an XRD apparatus using an X-ray having a diameter larger than that of a crystal part, a peak which shows a crystal plane does not appear. Furthermore, a halo pattern is shown in an electron diffraction pattern (also referred to as a selected-area electron diffraction pattern) of the nc-OS film obtained by using an electron beam having a probe diameter (e.g., larger than or equal to 50 nm) larger than the diameter of a crystal part. Meanwhile, spots are shown in a nanobeam electron diffraction pattern of the nc-OS film obtained by using an electron beam having a probe diameter close to, or smaller than the diameter of a crystal part. Furthermore, in a nanobeam electron diffraction pattern of the nc-OS film, regions with high luminance in a circular (ring) pattern are shown in some cases. Also in a nanobeam electron diffraction pattern of the nc-OS film, a plurality of spots are shown in a ring-like region in some cases (see
The nc-OS film is an oxide semiconductor film that has high regularity as compared to an amorphous oxide semiconductor film. Therefore, the nc-OS film has a lower density of defect states than an amorphous oxide semiconductor film. Note that there is no regularity of crystal orientation between different crystal parts in the nc-OS film. Therefore, the nc-OS film has a higher density of defect states than the CAAC-OS film.
Note that an oxide semiconductor film may be a stacked film including two or more films of an amorphous oxide semiconductor film, a microcrystalline oxide semiconductor film, and a CAAC-OS film, for example.
In the case where the oxide semiconductor film has a plurality of structures, the structures can be analyzed using nanobeam electron diffraction in some cases.
The camera 78 is installed so as to face the fluorescent plate 92 and can take a picture of a pattern appearing in the fluorescent plate 92. An angle formed by a straight line which passes through the center of a lens of the camera 78 and the center of the fluorescent plate 92 and an upper surface of the fluorescent plate 92 is, for example, 15° or more and 80° or less, 30° or more and 75° or less, or 45° or more and 70° or less. As the angle is reduced, distortion of the transmission electron diffraction pattern taken by the camera 78 becomes larger. Note that if the angle is obtained in advance, the distortion of an obtained transmission electron diffraction pattern can be corrected. Note that the film chamber 82 may be provided with the camera 78. For example, the camera 78 may be set in the film chamber 82 so as to be opposite to the incident direction of electrons 84. In this case, a transmission electron diffraction pattern with less distortion can be taken from the rear surface of the fluorescent plate 92.
A holder for fixing the substance 88 that is a sample is provided in the sample chamber 74. The holder transmits electrons passing through the substance 88. The holder may have, for example, a function of moving the substance 88 in the direction of the X, Y, and Z axes. The movement function of the holder may have an accuracy of moving the substance in the range of, for example, 1 nm to 10 nm, 5 nm to 50 nm, 10 nm to 100 nm, 50 nm to 500 nm, and 100 nm to 1 μm. The range is preferably determined to be an optimal range for the structure of the substance 88.
Then, a method for measuring a transmission electron diffraction pattern of a substance by the transmission electron diffraction measurement apparatus described above is described.
For example, changes in the structure of a substance can be observed by changing the irradiation position of the electrons 84 that are a nanobeam on the substance (or by scanning) as illustrated in
Even when the substance 88 is a CAAC-OS film, a diffraction pattern similar to that of an nc-OS film or the like is partly observed in some cases. Therefore, whether a CAAC-OS film is favorable can be determined by the proportion of a region where a diffraction pattern of a CAAC-OS film is observed in a predetermined area (also referred to as proportion of CAAC). In the case of a high quality CAAC-OS film, for example, the proportion of CAAC is higher than or equal to 50%, preferably higher than or equal to 80%, further preferably higher than or equal to 90%, still further preferably higher than or equal to 95%. Note that the proportion of a region where a diffraction pattern different from that of a CAAC-OS film is observed is referred to as the proportion of non-CAAC.
For example, transmission electron diffraction patterns were obtained by scanning a top surface of a sample including a CAAC-OS film obtained just after deposition (represented as “as-sputtered”) and a top surface of a sample including a CAAC-OS film subjected to heat treatment at 450° C. in an atmosphere containing oxygen. Here, the proportion of CAAC was obtained in such a manner that diffraction patterns were observed by scanning for 60 seconds at a rate of 5 nm/second and the obtained diffraction patterns were converted into still images every 0.5 seconds. Note that as an electron beam, a nanobeam with a probe diameter of 1 nm was used. The above measurement was performed on six samples. The proportion of CAAC was calculated using the average value of the six samples.
Here, most of diffraction patterns different from that of a CAAC-OS film are diffraction patterns similar to that of an nc-OS film. Furthermore, an amorphous oxide semiconductor film was not able to be observed in the measurement region. Therefore, the above results suggest that the region having a structure similar to that of an nc-OS film is rearranged by the heat treatment owing to the influence of the structure of the adjacent region, whereby the region becomes CAAC.
With such a measurement method, the structure of an oxide semiconductor film having a plurality of structures can be analyzed in some cases.
This embodiment can be implemented in combination with any of the other embodiments as appropriate.
In this embodiment, an example of a cross-sectional structure of a transistor used in a semiconductor device of one embodiment of the disclosed invention is described with reference to drawings.
The channel length direction denotes a direction in which carriers move at the shortest distance between a pair of impurity regions serving as a source region and a drain region. The channel width direction denotes a direction perpendicular to the channel length direction.
The second transistor 202 may include a channel formation region in a semiconductor film or a semiconductor substrate of silicon, germanium, or the like in an amorphous, microcrystalline, polycrystalline, or single crystal state. Alternatively, the second transistor 202 may include the channel formation region in an oxide semiconductor film or an oxide semiconductor substrate. In the case where the transistors each include a channel formation region in an oxide semiconductor film or an oxide semiconductor substrate, the first transistor 201 is not necessarily stacked over the second transistor 202, and the first transistor 201 and the second transistor 202 may be formed in the same layer.
In the case where the second transistor 202 is formed using a thin silicon film, any of the following can be used in the thin film: amorphous silicon formed by a sputtering method or a vapor phase growth method such as a plasma-enhanced chemical vapor deposition (CVD) method; polycrystalline silicon obtained by crystallization of amorphous silicon by treatment such as laser annealing; single crystal silicon obtained by separation of a surface portion of a single crystal silicon wafer by implantation of hydrogen ions or the like into the silicon wafer; and the like.
A substrate 400 where the second transistor 202 is formed can be, for example, a silicon substrate, a germanium substrate, or a silicon germanium substrate. In
The second transistor 202 is electrically isolated by element isolation. Trench isolation (e.g., shallow trench isolation (STI)) or the like can be used as the element isolation. In
In a projection of the substrate 400 that exists in a region other than the trench, an impurity region 402 and an impurity region 403 of the second transistor 202 and a channel formation region 404 placed between the impurity regions 402 and 403 are provided. The second transistor 202 also includes an insulating film 405 covering the channel formation region 404 and a gate electrode 406 that overlaps the channel formation region 404 with the insulating film 405 placed therebetween.
In the second transistor 202, a side portion and an upper portion of the projection in the channel formation region 404 overlap with the gate electrode 406 with the insulating film 405 positioned therebetween, so that carriers flow in a wide area including the side portion and the upper portion of the channel formation region 404. Thus, the area of the second transistor 202 in the substrate can be small, and the amount of transfer of carriers in the second transistor 202 can be increased. As a result, the on-state current and field-effect mobility of the second transistor 202 are increased. Suppose the length in the channel width direction (channel width) of the projection in the channel formation region 404 is W, and the thickness of the projection in the channel formation region 404 is T. When the aspect ratio of the thickness T to the channel width W is high, a region where carriers flow becomes larger. Thus, the on-state current of the second transistor 202 can be further increased and the field-effect mobility of the second transistor 202 can be further increased.
Note that in the case of the second transistor 202 formed using a bulk semiconductor substrate, the aspect ratio is preferably 0.5 or more, more preferably 1 or more.
An insulating film 411 is provided over the second transistor 202. Openings are formed in the insulating film 411. Conductive films 412 and 413 that are electrically connected to the impurity regions 402 and 403, respectively, and a conductive film 414 that is electrically connected to the gate electrode 406 are formed in the openings.
The conductive film 412 is electrically connected to a conductive film 416 formed over the insulating film 411. The conductive film 413 is electrically connected to a conductive film 417 formed over the insulating film 411. The conductive film 414 is electrically connected to a conductive film 418 formed over the insulating film 411.
An insulating film 420 is provided over the conductive films 416 to 418. An insulating film 421 having a blocking effect of preventing diffusion of oxygen, hydrogen, and water is provided over the insulating film 420. As the insulating film 421 has higher density and becomes denser or has a fewer dangling bonds and becomes more chemically stable, the insulating film 421 has a higher blocking effect. The insulating film 421 that has the effect of blocking diffusion of oxygen, hydrogen, and water can be formed using, for example, aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, or hafnium oxynitride. The insulating film 421 having an effect of blocking diffusion of hydrogen and water can be formed using, for example, silicon nitride or silicon nitride oxide.
An insulating film 422 is provided over the insulating film 421, and the first transistor 201 is provided over the insulating film 422.
The first transistor 201 includes, over the insulating film 422, a semiconductor film 430 including an oxide semiconductor, conductive films 432 and 433 functioning as source and drain electrodes and electrically connected to the semiconductor film 430, a gate insulating film 431 covering the semiconductor film 430, and a gate electrode 434 overlapping with the semiconductor film 430 with the gate insulating film 431 therebetween. Note that an opening is formed in the insulating films 420 to 422. The conductive film 433 is connected to the conductive film 418 in the opening.
In addition, the first transistor 201 includes, on the side opposite to gate electrode 434, a gate electrode 424 overlapping with the semiconductor film 430 with the insulating film 422 therebetween. The gate electrode 424 functions as, for example, the back gate of the transistor 107 described in the above embodiment.
When the first transistor 201 includes a pair of gate electrodes, a signal for controlling an on state or an off state may be input to one of the gate electrodes, and the other of the gate electrodes may be supplied with a potential from another element. In that case, potentials with the same level may be supplied to the pair of gate electrodes, or a fixed potential such as the ground potential may be supplied only to the other of the gate electrodes. By controlling the level of a potential supplied to the other of the gate electrodes, the threshold voltage of the transistor can be controlled.
In
The insulating film 422 preferably has a function of supplying part of oxygen to the oxide semiconductor films 430a to 430c by heating. It is preferable that the number of defects in the insulating film 422 be small, and typically the spin density of g=2.001 due to a dangling bond of silicon be lower than or equal to 1×1018 spins/cm3. The spin density is measured by electron spin resonance (ESR) spectroscopy.
The insulating film 422, which has a function of supplying part of the oxygen to the oxide semiconductor films 430a to 430c by heating, is preferably an oxide. Examples of the oxide include aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. The insulating film 422 can be formed by a plasma-enhanced CVD method, a sputtering method, or the like.
Note that in this specification, oxynitride contains more oxygen than nitrogen, and nitride oxide contains more nitrogen than oxygen.
Note that in the first transistor 201 illustrated in
With the s-channel structure, specifically, when a potential at which the first transistor 201 is turned off is supplied to the gate electrode 434, the amount of off-state current that flows between the conductive films 432 and 433 through the end portions of the oxide semiconductor film 430b can be reduced. For this reason, in the first transistor 201, even when the distance between the conductive films 432 and 433 at the end portions of the oxide semiconductor film 430b is reduced as a result of reducing the channel length to obtain high on-state current, the first transistor 201 can have low off-state current. Consequently, with the short channel length, the first transistor 201 can have high on-state current when in an on state and low off-state current when in an off state.
With the s-channel structure, specifically, when a potential at which the first transistor 201 is turned on is supplied to the gate electrode 434, the amount of current that flows between the conductive films 432 and 433 through the end portions of the oxide semiconductor film 430b can be increased. The current contributes to an increase in the field-effect mobility and on-state current of the first transistor 201. When the end portions of the oxide semiconductor film 430b are overlapped with the gate electrode 434, carriers flow in a wide region of the oxide semiconductor film 430b without being limited to a region in the vicinity of the interface between the oxide semiconductor film 430b and the gate insulating film 431, which results in an increase in carrier mobility of the first transistor 201. As a result, the on-state current of the first transistor 201 is increased, and the field-effect mobility is increased. Typically, the field-effect mobility is greater than or equal to 10 cm2/V·s or greater than or equal to 20 cm2/V·s. Note that here, the field-effect mobility is not an approximate value of the mobility as the physical property of the oxide semiconductor film but is an index of current drive capability and the apparent field-effect mobility of a saturation region of the transistor.
Although this embodiment is described with reference to
This embodiment can be implemented in combination with any of the other embodiments as appropriate.
Although the conductive film and the semiconductor film described in the above embodiments can be formed by a sputtering method, they may be formed by another method, for example, a thermal CVD method. A metal organic chemical vapor deposition (MOCVD) method or an atomic layer deposition (ALD) method may be employed as an example of a thermal CVD method.
A thermal CVD method has an advantage that no defect due to plasma damage is generated since it does not utilize plasma for forming a film.
Deposition by a thermal CVD method may be performed in such a manner that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, and a source gas and an oxidizer are supplied to the chamber at a time and react with each other in the vicinity of the substrate or over the substrate.
Deposition by an ALD method may be performed in such a manner that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, source gases for reaction are sequentially introduced into the chamber, and then the sequence of the gas introduction is repeated. For example, two or more kinds of source gases are sequentially supplied to the chamber by switching respective switching valves (also referred to as high-speed valves). For example, a first source gas is introduced, an inert gas (e.g., argon or nitrogen) or the like is introduced at the same time as or after the introduction of the first source gas so that the source gases are not mixed, and then a second source gas is introduced. Note that in the case where the first source gas and the inert gas are introduced at a time, the inert gas serves as a carrier gas, and the inert gas may also be introduced at the same time as the introduction of the second source gas. Alternatively, the first source gas may be exhausted by vacuum evacuation instead of the introduction of the inert gas, and then the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first single-atomic layer; then the second source gas is introduced to react with the first single-atomic layer; as a result, a second single-atomic layer is stacked over the first single-atomic layer, so that a thin film is formed. The sequence of the gas introduction is repeated plural times until a desired thickness is obtained, whereby a thin film with excellent step coverage can be formed. The thickness of the thin film can be adjusted by the number of repetition times of the sequence of the gas introduction; therefore, an ALD method makes it possible to accurately adjust a thickness and thus is suitable for manufacturing a minute FET.
The conductive film and the semiconductor film which are described in the above embodiment can be formed by a thermal CVD method such as an MOCVD method or an ALD method. For example, in the case where an InGaZnOX (X>0) film is formed, trimethylindium, trimethylgallium, and dimethylzinc are used. Note that the chemical formula of trimethylindium is (CH3)3In. The chemical formula of trimethylgallium is (CH3)3Ga. The chemical formula of dimethylzinc is (CH3)2Zn. Without limitation to the above combination, triethylgallium (chemical formula: (C2H5)3Ga) can be used instead of trimethylgallium and diethylzinc (chemical formula: (C2H5)2Zn) can be used instead of dimethylzinc.
For example, in the case where a tungsten film is formed using a deposition apparatus employing ALD, a WF6 gas and a B2H6 gas are sequentially introduced plural times to form an initial tungsten film, and then a WF6 gas and an H2 gas are introduced at a time, so that a tungsten film is formed. Note that an SiH4 gas may be used instead of a B2H6 gas.
For example, in the case where an oxide semiconductor film, e.g., an InGaZnOX (X>0) film is formed using a deposition apparatus employing ALD, an In(CH3)3 gas and an O3 gas are sequentially introduced plural times to form an InO2 layer, a Ga(CH3)3 gas and an O3 gas are introduced at a time to form a GaO layer, and then a Zn(CH3)2 gas and an O3 gas are introduced at a time to form a ZnO layer. Note that the order of these layers is not limited to this example. A mixed compound layer such as an InGaO2 layer, an InZnO2 layer, a GaInO layer, a ZnInO layer, or a GaZnO layer may be formed by mixing of these gases. Note that although an H2O gas which is obtained by bubbling with an inert gas such as Ar may be used instead of an O3 gas, it is preferable to use an O3 gas, which does not contain H. Instead of an In(CH3)3 gas, an In(C2H5)3 gas may be used. Instead of a Ga(CH3)3 gas, a Ga(C2H5)3 gas may be used. Alternatively, a Zn(CH3)2 gas may be used.
This embodiment can be implemented in combination with any of the other embodiments as appropriate.
In this embodiment, application examples of the semiconductor device described in the above embodiments to an electronic component and to an electronic device including the electronic component are described with reference to
A semiconductor device including the transistors illustrated in
The post-process can be completed through steps shown in
A dicing step of grinding the back surface of the substrate to separate the substrate into a plurality of chips is performed. Then, a die bonding step of individually picking up separate chips to be mounted on and bonded to a lead frame is performed (Step S3). To bond a chip and a lead frame in the die bonding step, a method such as resin bonding or tape-automated bonding is selected as appropriate depending on products. Note that in the die bonding step, a chip may be mounted on an interposer to be bonded.
Next, wiring bonding for electrically connecting a lead of the lead frame and an electrode on a chip through a metal wire is performed (Step S4). As a metal wire, a silver wire or a gold wire can be used. For wire bonding, ball bonding or wedge bonding can be employed.
A wire-bonded chip is subjected to a molding step of sealing the chip with an epoxy resin or the like (Step S5). With the molding step, the inside of the electronic component is filled with a resin, thereby reducing damage to the circuit portion and the wire embedded in the component caused by external mechanical force as well as reducing deterioration of characteristics due to moisture or dust.
Subsequently, the lead of the lead frame is plated. Then, the lead is cut and processed into a predetermined shape (Step S6). Through the plating process, corrosion of the lead can be prevented, and soldering for mounting the electronic component on a printed circuit board in a later step can be performed with higher reliability.
Next, printing process (marking) is performed on a surface of the package (Step S7). Then, through a final test step (Step S8), the electronic component is completed (Step S9).
The above electronic component can include the semiconductor device described in the above embodiments. Thus, the electronic component which achieves reduction in size and cost can be obtained.
Then, applications of the electronic component to an electronic device such as a computer, a portable information terminal (including a mobile phone, a portable game machine, an audio reproducing device, and the like), electronic paper, a television device (also referred to as a television or a television receiver), or a digital video camera are described.
Note that the first display portion 903a is a panel having a touch input function, and for example, as illustrated in the left of
Furthermore, one of the first display portion 903a and the second display portion 903b can be detached from the portable information terminal as illustrated in the right of
The portable information terminal in
The portable information terminal in
Furthermore, the housing 902 in
As described above, an electronic component including the semiconductor device described in the above embodiments is provided in each of the electronic devices described in this embodiment. Thus, the electronic devices can consume less power and operate at high speed.
13: transistor, 15: transistor, 70: electron gun chamber, 72: optical system, 74: sample chamber, 76: optical system, 78: camera, 80: observation chamber, 82: film chamber, 84: electron, 88: substance, 92: fluorescent plate, 101: variable bias circuit, 102: transistor, 103: current source, 104: differential amplifier, 105: reference voltage source, 106: functional circuit, 107: transistor, 200: memory cell, 201: transistor, 202: transistor, 203: storage capacitor, 204: word line, 205: capacitor word line, 206: source line, 207: bit line, 208: back gate bias line, 209: driver circuit, 210: driver circuit, 301: PWM wave generation circuit, 302: constant voltage circuit, 303: inverter, 304: level shifter, 305: level shifter, 306: switch transistor, 307: switch transistor, 308: resistor, 309: capacitor, 400: substrate, 401: element isolation region, 402: impurity region, 403: impurity region, 404: channel formation region, 405: insulating film, 406: gate electrode, 411: insulating film, 412: conductive film, 413: conductive film, 414: conductive film, 416: conductive film, 417: conductive film, 418: conductive film, 420: insulating film, 421: insulating film, 422: insulating film, 424: gate electrode, 430: semiconductor film, 430a: oxide semiconductor film, 430b: oxide semiconductor film, 430c: oxide semiconductor film, 431: gate insulating film, 432: conductive film, 433: conductive film, 434: gate electrode, 501: triangle wave generation circuit, 502: comparator, 503: inverter buffer, 504: inverter buffer, 601: inverter, 602: switch, 603: NAND, 604: clock inverter, 605: switch, 606: inverter, 607: clock NAND, 608: multiplexer, 609: inverter, 610: oxide semiconductor transistor, 611: transistor, 612: transistor, 613: transistor, 614: capacitor, 615: capacitor, 616: wiring, 700: electronic component, 701: lead, 702: printed circuit board, 703: circuit portion, 704: circuit substrate, 901: housing, 902: housing, 903a: display portion, 903b: display portion, 904: selection button, 905: keyboard, 910: e-book reader, 911: housing, 912: housing, 913: display portion, 914: display portion, 915: hinge portion, 916: power switch, 917: operation key, 918: speaker, 920: television device, 921: housing, 922: display portion, 923: stand, 924: remote controller, 930: main body, 931: display portion, 932: speaker, 933: microphone, 934: operation button, 941: main body, 942: display portion, and 943: operation switch.
This application is based on Japanese Patent Application serial no. 2014-048276 filed with Japan Patent Office on Mar. 12, 2014, the entire contents of which are hereby incorporated by reference.
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