专利汇可以提供Reverse blocking tetrode thyristor专利检索,专利查询,专利分析的服务。并且PURPOSE: To improve dielectric breakdown characteristics by the method wherein, in a device in which a reverse conducting type thyristor wafer and a diode wafer, constituting a thyristor, are fixed via an intermediate supporting plate, these wafers are provided with positive bevels, and their outer diameters are reduced as they remove away from the supporting plate.
CONSTITUTION: Reverse conducting thyristor wafer 1 having a pnipnjunction and diode wafer 2' having one pn-junction are integrated via intermediate supporting plate 21, and thereby a reverse blocking tetrode thyristor is formed. In this structure, the pn-junctions in their respective edges of wafers 1 and 2' are cut diagonally by operating terminal surface shaping. Bevel 19 is provided for wafer 1 so as to reduce the surface field intensity with respect to center pn junction 11. Wafer 2' is provided with bevels 20, 20', which form acute angles with respect to center junction 18. By this, no reinforcing member to ptotect the end surface shaping parts is required, and the structure is simplified. Further, it is possible to increase dielectric breakdown voltage.
COPYRIGHT: (C)1980,JPO&Japio,下面是Reverse blocking tetrode thyristor专利的具体信息内容。
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