Formation of semiconductor protective film
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CONSTITUTION: Semiconductor blanks 12, each formed with an insulating protective film thereon, are placed on a cathode 3. First, the air in the interior of a vacuum container 1 is evacuated by a vacuum evacuating system 9 and after the vacuum container 1 has been brought into a high vacuum state of about 1×10
-7 Torr, an adjusting valve 10 is throttled and the evacuating speed of the evacuating system 19 is reduced, and at the same time, diborane gas is introduced into the container 1 through a gas flow controller 8 and the pressure in the interior of the container 1 is adjusted to 0.1W10Torr. The semiconductor elementary boides 12 are kept having been by a heater 5 to 300°C, for example. After then, a voltage is impressed between electrodes 2 and 3 by a DC electric power source 4 to make a glow discharge generate. As a result, the diborane gas is resolved and a boron film is respectively formed on the protective film of each of the semiconductor blanks 12.
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