Manufacture of thin film
专利汇可以提供Manufacture of thin film专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain the titled method wherein the modiier which can increase the deposition speed of thin films and change the film quality can be added, by superposing plasma CVD method and sputtering method one upon another. CONSTITUTION:The inside of a vacuum reaction chamber 1 is made vacuous by a vacuum pump through a vacuum exhaust pipe 7. It is preferable to make vacuous to reduce the influence by residual gas. Next, substrates 4 on a substrate holder 3 are heated to a desired temperature by a substrate heater 5. Then, rare gas such as argon and raw material gas for plasma CVD are introduced from a gas introduction pipe 6, and then the amount of gas exhausted from a vacuum exhaust pipe 7 is adjusted by the exhaust ability of the vacuum pump, resulting in a desired pressure in the vacuum reaction chamber. Glow discharge is generated in the vacuum reaction chamber 1 by impressing RF voltage onto a cathode 2. Thereat, the raw material gas introduced from the gas introduction pipe 6 is deposited on the substrates 4 as films by glow discharge decomposition. At the same time, a target 8 is sputtered by rare gas ion such as argon, and accordingly target substance is deposited on the substrates 4. Various kind of films can be obtained by changing the raw material gas and the target material.，下面是Manufacture of thin film专利的具体信息内容。
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