Magnetic memory devices having multiple magnetic tunnel junctions therein
专利汇可以提供Magnetic memory devices having multiple magnetic tunnel junctions therein专利检索，专利查询，专利分析的服务。并且Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.，下面是Magnetic memory devices having multiple magnetic tunnel junctions therein专利的具体信息内容。
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