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Gas doping of solid due to crystal growth

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专利汇可以提供Gas doping of solid due to crystal growth专利检索,专利查询,专利分析的服务。并且PURPOSE: To trap high-concentration gas molecules in a solid with a selected, limited degree of freedom.
CONSTITUTION: A high-concentration diatomic molecule is subjected to caging in a host crystal, and all other inner degree of freedom of the diatomic molecule, excluding the degree of freedom of vibration is frozen. This kind of system provides an efficient infrared-ray solid laser that can be pumped by a laser diode. Other applications include a magnetic (Faraday) rotor, an electrooptical switch, and a Q-switch. For introducing the diatomic molecules into a host lattice at a temperature slightly higher than the melt point of a host crystal in the crystal growth method, the Czochralski-type or Bridgman-type process under a high pressure is used, and the temperature is gradually lowered for cooling.
COPYRIGHT: (C)1992,JPO,下面是Gas doping of solid due to crystal growth专利的具体信息内容。

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