Silicon single-crystal substrate
专利汇可以提供Silicon single-crystal substrate专利检索，专利查询，专利分析的服务。并且PURPOSE: To uniformly disperse thermal stress applied at a heat treatment in a semiconductor-device manufacturing process on the whole circumference of an Si substrate and to restrain a slip dislocation from being generated by a method wherein a recessed part or one or a plurality of holes which are passed through both main faces and which do not reach the circumferential part are formed in a region, of the Si substrate, in which chips are not formed.
CONSTITUTION: An Si single crystal manufactured by the Czochralski method or the zone-melting method is processed to a cylindrical Si single-crystal ingot 4 of a desired size. Then, circular holes 5 are made perpendicularly to both edges in such a way that they are passed through both edges of the cylindrical Si single-crystal ingot. A region in which chips for semiconductor devices are not formed has been set in advance, and the holes are made in desired positions inside the region. In succession, the ingot is sliced in a desired thickness to form an Si substrate 6. The Si substrate 6 is finished as an Si substrate for semiconductor-device manufacturing use after a chamfering chemical finishing process, a mirror polishing process and the like.
COPYRIGHT: (C)1992,JPO&Japio，下面是Silicon single-crystal substrate专利的具体信息内容。
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