Production of silicon single crystal and apparatus therefor
专利汇可以提供Production of silicon single crystal and apparatus therefor专利检索，专利查询，专利分析的服务。并且PURPOSE: To keep the liquid level of a raw material in a Czochralski process performed by supplying granular Si to a crucible and to uniformize the quality of the product, by using a ring heater dividing the crucible leaving a gap at the lower part and keeping the surface temperature of the raw material liquid outside of the heater at a specific level with said heater.
CONSTITUTION: An Si raw material is charged into a crucible 1 and melted by heating with a heater 6 outside of the crucible 1. A ring heater 11 is lowered and dipped into the molten raw material 4 concentrically to the crucible 1 leaving the top part on the liquid surface and forming a gap between the lower end of the ring heater and the bottom of the crucible 1. The raw material 4 in the raw material melting part B outside of the heater 11 is mainly heated with the heater 11 to keep the liquid surface temperature to a level higher than the melting point of Si by ≥12°C. A single crystal 5 is pulled up from a single crystal pull-up part A in the ring heater 11. In the course of the pull-up operation, granular Si 16 is continuously supplied from an apparatus 13, melted and transferred through the lower gap of the heater 11 to the part A. The liquid level of the raw material 4 can be constantly maintained at a definite level by this process.
COPYRIGHT: (C)1989,JPO&Japio，下面是Production of silicon single crystal and apparatus therefor专利的具体信息内容。
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