Production of compound semiconductor single crystal
专利汇可以提供Production of compound semiconductor single crystal专利检索，专利查询，专利分析的服务。并且PURPOSE: To suppress dissociation of volatile element produced before melting of a raw material crystal and obtain a good-quality compound semiconductor single crystal in good reproducibility, by separately providing a heater for heating raw material crystal and heater for heating a sealing agent in production of semiconductor single crystal of compound of groups III-V by liquid sealing Czochralski process.
CONSTITUTION: In production of compound semiconductor single crystal according to liquid sealing Czochralski process by putting a sealing agent 2 on a raw material crystal 1 in crucible 5 and melting the crystal 1 by heating in order to form melt layer of sealing agent 2 on the melt of raw material crystal 1 and pulling up the crystal from the above-mentioned melt in order to grow the single crystal, the following constitution is adapted: A lower heater 4 for heating the raw material crystal 1 and upper heater 3 for heating the sealing agent 2 are separately provided. Then the sealing agent 2 is softened by heating the agent in vacuum to cover the raw material crystal 1 in the crucible 5 and then the raw material 1 is heated under pressure to heat the raw material 1 from the bottom of crucible 5.
COPYRIGHT: (C)1989,JPO&Japio，下面是Production of compound semiconductor single crystal专利的具体信息内容。
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