Method for implementing no-defect state in surface layer of semiconductor substrate
专利汇可以提供Method for implementing no-defect state in surface layer of semiconductor substrate专利检索，专利查询，专利分析的服务。并且PURPOSE: To display a gettering effect with good reproducibility during a wafer process, by performing high temperature heat treatment of a semiconductor substrate in three stages, while restricting a temperature ranges and times.
CONSTITUTION: A silicon substrate, which is formed by a Czochralski method is kept for, e.g., 30 minutes at a high temperature (a), e.g., 1,280°C, which is selected in the range of 1,200W1,400°C. During this period, Oxygen in the surface of the silicon substrate is excluded to the outside. Oxygen atoms in the crystal become atom states. Many intrinsic point defects are yielded. Then the temperature is decreased to about 700°C at the temperature decreasing speed of 40W1,000°C/min. The substrate is kept for 1W10hours, e.g., 8hours. During this period, defects in the surface layer of the silicon substrate are completely cured, and nucleuses are deposited and formed in the crystal. Then the substrate is kept at the intermediate temperature (c) of about 1,000°C for more than 10 minutes, e.g., 8hours. The deposited nucleuses are grown into the nucleuses, which become the cause of an intrinsic gettering effect in the next high temperature step.
COPYRIGHT: (C)1989,JPO&Japio，下面是Method for implementing no-defect state in surface layer of semiconductor substrate专利的具体信息内容。
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