Semiconductor integrated memory cell
专利汇可以提供Semiconductor integrated memory cell专利检索，专利查询，专利分析的服务。并且PURPOSE:To provide a semiconductor IC memory cell having small area and high operating speed by supplying charge stored in memory cell from a substrate. CONSTITUTION:Bit and word wires 34 and 33 are stereoscopically crossed through an insulating thin film 36 on an n-type substrate. The bit wires are disposed under the word wires at the stereoscopic cross points so that the word wires are superimposed through a thick insulating film on the bit wires 34, and fringe-like p-type wells 32 are formed on the n-type substrate directly under the bit wires 34. The wells 32 are partially extended to the portion directly under the word wires 33 crossed stereoscopically completely, and utilized for the channel of a transistor as the gate electrode of the word wires. Charge is stored in charge storage region 35 formed in the wells. When a voltage pulse is applied to the word wire to conduct the region 35 with the substrate, the charge is flown to the substrate depending upon the existence or non-existence of the charge in the region 35. Thus, potential change occurs at the bit wire gate in floating state at reading time to produce an output signal therefrom. According to this configuration the resistance of the charge supply wire is almost zero to communicate the charge at high speed and to reduce the size of the memory cell.，下面是Semiconductor integrated memory cell专利的具体信息内容。
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