Nanufacture for semiconductor device
专利汇可以提供Nanufacture for semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To prevent the occurrence of open stage, even with the nitride film remained, by accurate opening through the utilization of self-alignment technology and the forming of insulation film sufficiently thick.
CONSTITUTION: The CVD SiO
2 35 is thickly formed on the thermal oxidation thin film 34 of the N type Si substrate 31 providing the P base layer 32 of protection ring type, and selective opening is made by using the etching speed difference. Succeedingly, the films 35 and 33 are unified with high temperature treatment. Next, Si
3 N
4 38 is laminated and openings 39, 40 are made with accuracy and smaller in the opening of the film 35, and the window 43 is formed by etching with the resist mask 41. In this case, since the film 34 is thin, the eaves by the nitride film 38 is small and no open stage is caused at electrode coating. The N type doped polycrystal Si 45 is selectively formed and the emitter layer 44 is provided with thermal diffusion, the base electrode window 46 is formed the opening 40, forming the electrodes 47 and 48. Thus, the thickness of the insulation film can sufficiently be made thick, accurate opening is possible, no stage open is caused even with the nitride film remained, allowing to form the electrodes without open stage.
COPYRIGHT: (C)1979,JPO&Japio，下面是Nanufacture for semiconductor device专利的具体信息内容。
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