Production of semiconductor element
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CONSTITUTION: First, an element formed with a SiO
2 film 23 on the recess surface of a semiconductor wafer 21 having undulations on one surface and formed with a SiN film 22 having eaves on the peak faces of the raised parts is produced. Next, a SiN film 27 is formed over the entire surface of this element, after which selective etching of the film 27 is performed by performing ion implantation of B (or P) over the entire surface of the wafer 21, leaving the film 27 on the back of the eaves of the film 22 and the side faces of the raised parts of the wafer 21. Next, with the films 22, 27 as a mask, the film 23 is windowed for diffusion, exposing the bottom of the recesses of the wafer 21. B (or P) is diffused to this exposed part to form a conductive layer 28 and a SiO
2 film 29 on the surface thereof. Next, P (or B) is ion-implanted over the entire sur face of the wafer 21 and the film 22 of the peak face of the raised part 25 is selectively etched, exposing the peak face of the raised part. Next, a conductive layer 30 is formed on the exposed part. Next, with the film 27 as mask, the film 29 is removed and electrodes 32, 33 are formed on the bottom of the recess of the wafer 21 and the exposed peak of the raised part
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