Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain a resist pattern in any shape through self-matching to a wall of a structure body by exposing the wall by irradiating the structure body with slant beams.
CONSTITUTION: On Si substrate 1, thick SiO
2 film 2 is grown and provided with the pattern of a resist film, which is used as a mask for etching, thereby providing groove 3 to film 2. Next, thin gate SiO
2 film 4 is adhered onto exposed substrate 1 in groove 3 and gate metal 5 of Mo, W, poly-crystal Si, or the like is vapor- deposited on the entire surface covering film 4. Then, the entire surface is covered with positive type resist film 6 and film 6 is exposed to incident beams 12 such as electron beam, X rays and far ultraviolet rays in the right and left slant directions. As a result, since the gate width can be controlled depending upon incident angle θ of beam 12, this controlled film is used as a mask for etching metal 5, so that gate 7 in any shape can be obtained in groove 3. Then, gate 7 is used as a mask and source and drain regions 8 and 8' are diffusion-formed through self-matching to obtain a MOSFET.
COPYRIGHT: (C)1979,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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