Charge coupled type semiconductor device
专利汇可以提供Charge coupled type semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent the influence of the variation in the voltage of a power source by forming a region of the same configuration as a charge storage unit or a transfer unit and a breeder region in series, forming them between a pair of terminals for power source supply and leading out a voltage from an intermediate point to be applied to a charge injection unit. CONSTITUTION:An N type layer 11 is formed on an N type layer 10 on a P type substrate 1, and the potential of the storage unit 4 is formed deeper than a transfer unit 2. An MOS13 having the same configuration as the storage unit 4 and a breeder MOS14 are formed in another part, a voltage VSG is led out from the N type layer at the intermediate point, and is supplied to an N type injuction layer 6 gate electrode 20. The electrode 5 of the gate region of the layer 10 and the N type layer 18 of the MOS14 are grounded. At this time the MOS14 operates as a breeder resistor and maintains the potential of the N type layer 15 of the MOS13 at the prescribed value with respect to the ground potential. Accordingly, even if the power voltage V00 is varied, the VSG will be fixed to 0V of the storage unit 4 always by the MOS14, thereby eliminating the power voltage dependency, and since the gate 17 of the MOS13 and the channel are formed under the same conditions, it can eliminate the condition dependency and can obtain sufficient operation margin.，下面是Charge coupled type semiconductor device专利的具体信息内容。
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