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Rinsing agent for gallium arsenide wafer and method of rinsing same

阅读:630发布:2023-12-27

专利汇可以提供Rinsing agent for gallium arsenide wafer and method of rinsing same专利检索,专利查询,专利分析的服务。并且PURPOSE: To reduce haze generated on the polished face of a gallium arsenide wafer and to eliminate directional trace by providing solution in which sodium salt or potassium salt is dissolved in water.
CONSTITUTION: When a gallium arsenide wafer is rinsed after polishing, solution in which sodium salt or potassium salt is dissolved in water is employed instead of conventional pure water as rinsing agent to rinse the polished wafer. The agent is aqueous solution in which any of sodium carbonate, sodium hydroxide, potassium hydroxide and potassium carbonate is dissolved in pure water. Thus, the polished face of the wafer is low haze with less fine uneven part and directional trace is not observed on the polished face.
COPYRIGHT: (C)1990,JPO&Japio,下面是Rinsing agent for gallium arsenide wafer and method of rinsing same专利的具体信息内容。

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