Memory element |
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| 申请号 | JP24470788 | 申请日 | 1988-09-30 | 公开(公告)号 | JPH01157765A | 公开(公告)日 | 1989-06-21 |
| 申请人 | Catheter Research Inc; | 发明人 | UIRIAMU SHII MATSUKOI; FUREDERITSUKU II WANGU; JIEIMUZU II SUMOORU; GUREGORII EI KOORU; | ||||
| 摘要 | PURPOSE: To prevent the introduction of pollutants by providing a memory element with a first portion and second portion respectively having specific crystalline structures, interconnecting these portions and providing the element with partition means having an amorphous structure different from the specific crystalline structures of the first portion and the second portion. CONSTITUTION: Wire leads 12 of silver are connected to the memory element 10 at junction points 14 by coupling means and are partially covered with insulating materials 16. The silver leads 12 are welded or soldered by heating to the memory element 10. At this time, the streams of ion materials 8 shown by arrows 18 are generated and impurities to weaken a shape-memory effect characteristic are formed. The thermal stress partition region 26 is formed by energy streams 24 which give rise to local dissolution to fissure the crystalline structures of the alloy consisting of the memory element 20 with a laser or the like as an energy source 22, by which the memory element 20 is parted to a lead-attachment portion 28 and the shape-memory portion 30. As a result, the power is supplied to the lead-attachment portion 28 and the migration of the transmitted ion materials 18 to the shape-memory portion 30 is prohibited by the partition means 26 and the shape-memory effect characteristic is maintained. COPYRIGHT: (C)1989,JPO |
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