According to an aspect of the invention, it is provided a magnetic operational amplifier having a differential stage (1) comprising a first magnetic field effect transistor MAGFET (11) and a differential signal conditioner, the differential signal conditioner comprising a charge stage (151), a differential input pair (153) connected to the charge stage (151) and a biasing current source (155) connected to the differential input pair (153); the magnetic field effect transistor MAGFET (11) being connected to the charge stage (151) as a second differential input pair and the differential signal conditioner comprising a second biasing current source (156) connected to the magnetic field effect transistor MAGFET (11).

The present disclosure concerns a magnetic logic unit (MLU) cell comprising: a first magnetic tunnel junction (2) and a second magnetic tunnel junction (2), each magnetic tunnel junction comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization, and a tunnel barrier layer (22) between the first and second layer (21, 23); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to switch the first magnetization (210); the first magnetic layer (21) being arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field (42). The present disclosure also concerns an MLU amplifier (10) comprising a plurality of the MLU cell (1). The MLU amplifier has large gains, extended cut off frequencies and improved linearity.

A current amplifying element that operates at a higher speed than conventional semiconductor devices is provided. An input current flows through an input current path 60 in a direction X, and a magnetic field generated from a magnet 90 is applied in a direction Z which is perpendicular to the direction X. An output current path 70 is formed under the input current path 60 with an insulator 80 interposed therebetween. Since the direction in which an output current flows is perpendicular to both the input current and the magnetic field, the current is amplified by the galvanomagnetic effects produced by the input current and the magnetic field.

The present disclosure concerns magnetic logic unit (MLU) cell (1) comprising a first and second magnetic tunnel junction (2), each comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization (230), and a barrier layer (22); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to adjust the first magnetization (210); the first and second magnetic layers (21, 23) and the barrier layer (22) being arranged such that the first magnetization (210) is magnetically coupled antiparallel with the second magnetization (230) through the barrier layer (22); the MLU cell (1) further comprising a biasing device (50) arranged for applying a static biasing magnetic field (53) oriented substantially parallel to the external magnetic field (42) such as to orient the first magnetization (210) at about 90° relative to the second magnetization (230), the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field (42).