| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | SHELL TYPE ACTUATOR | PCT/US2004027162 | 2004-08-20 | WO2005020434A3 | 2005-05-06 | ZALALUTDINOV MAXIM; REICHENBACH ROBERT B; AUBIN KEITH; HOUSTON BRIAN H; PARPIA JEEVAK M; CRAIGHEAD HAROLD G |
| A micromechanical resonator (400, 1125) is formed on a substrate (120). The resonator has a partial spherical shell (110) clamped on an outside portion of the shell to the substrate. In other embodiments, a flat disc or other shape may be used. Movement is induced in a selected portion of the disc, inducing easily detectable out-of-plane motion. A laser (1110) is used in one embodiment to heat the selected portion of the disc and induce the motion. The motion may be detected by capacitive or interferometric techniques. | ||||||
| 82 | DIRECT MODULATION AND DEMODULATION WITH ACOUSTIC WAVE DEVICES | PCT/IB2009054104 | 2009-09-18 | WO2010038166A2 | 2010-04-08 | VAN ELZAKKER MICHIEL |
| Transceivers for wireless nodes often contain both a crystal and an acoustic wave device. The present invention directly uses an acoustic wave device for modulation and demodulation. As a result the crystal, which is both bulky and expensive, is no longer required. In addition the present invention can reduce power consumption. | ||||||
| 83 | MEMS DEVICE ANNEALING BY LASER | PCT/US2004027226 | 2004-08-20 | WO2005035436A3 | 2005-11-10 | ZALALUTDINOV MAXIM; REICHENBACH ROBERT B; AUBIN KEITH; HOUSTON BRIAN H; ZEHNDER ALAN T; PARPIA JEEVAK M; CRAIGHEAD HAROLD G |
| A method of increasing a quality factor for a micromechanical resonator uses a laser beam to anneal the micromechanical resonator. In one embodiment, the micromechanical oscillator is formed by fabricating a mushroom shaped silicon oscillator (235) supported by a substrate (210) via a pillar (120). The laser beam is focused on a periphery of the mushroom shaped silicon oscillator to modify the surface of the mushroom shaped silicon oscillator. In a further embodiment, the mushroom shaped oscillator is a silicon disk formed on a sacrificial layer. Portions of the sacrificial layer are removed to free the periphery of the disk and leave a supporting pillar at the center of the disk. In further embodiments, different type resonators may be used. | ||||||
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