| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 包括通过投影光学装置的光操纵的依赖图案的邻近匹配/调节 | CN201110353442.0 | 2011-11-09 | CN102566299A | 2012-07-11 | 冯函英; 曹宇; 叶军 |
| 本发明公开了包括通过投影光学装置的光操纵的依赖图案的邻近匹配/调节。此处描述的是匹配光刻投影设备与参考光刻投影设备的特性的方法，其中所述匹配包括优化投影光学装置特性。投影光学装置可以用于对光刻投影设备中的波前成形。根据此处的实施例，所述方法可以通过利用使用传递交叉系数的偏导数的泰勒级数展开或线性拟合算法加快所述方法。 | ||||||
| 2 | 包括通过投影光学装置的光操纵的依赖图案的邻近匹配/调节 | CN201110353442.0 | 2011-11-09 | CN102566299B | 2015-01-21 | 冯函英; 曹宇; 叶军 |
| 本发明公开了包括通过投影光学装置的光操纵的依赖图案的邻近匹配/调节。此处描述的是匹配光刻投影设备与参考光刻投影设备的特性的方法，其中所述匹配包括优化投影光学装置特性。投影光学装置可以用于对光刻投影设备中的波前成形。根据此处的实施例，所述方法可以通过利用使用传递交叉系数的偏导数的泰勒级数展开或线性拟合算法加快所述方法。 | ||||||
| 3 | SEMICONDUCTOR STRUCTURE | US15639379 | 2017-06-30 | US20170300611A1 | 2017-10-19 | Hui Yu LEE; Feng Wei KUO; Jui-Feng KUAN; Yi-Kan CHENG |
| The semiconductor structure includes a first conductive path including first and second segments. The first segment is in a first conductive layer. The second segment is in a second conductive layer. The first and second segments are electrically connected. The semiconductor structure includes a second conductive path including third and fourth segments. The third segment is in the first conductive layer. The fourth segment is in the second conductive layer. The third and fourth segments are electrically connected. The semiconductor structure includes a third conductive path between the first conductive path and the second conductive path, the third conductive path includes fifth and sixth segments. The fifth segment is in the second conductive layer. The sixth segment is in the first conductive layer. The fifth and sixth segments are electrically connected. An area of the first conductive layer between the first and third segments is free of the sixth segment. | ||||||
| 4 | PATTERN-DEPENDENT PROXIMITY MATCHING/TUNING INCLUDING LIGHT MANIPULATION BY PROJECTION OPTICS | US14046778 | 2013-10-04 | US20140033145A1 | 2014-01-30 | Hanying FENG; Yu Cao; Jun Ye |
| Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs). | ||||||
| 5 | Method and apparatus for enhanced optical proximity correction | US13414183 | 2012-03-07 | US08589830B2 | 2013-11-19 | Chia-Cheng Chang; Chin-Min Huang; Wei-Kuan Yu; Cherng-Shyan Tsay; Lai Chien Wen; Hua-Tai Lin |
| Provided is an integrated circuit (IC) design method. The method includes receiving an IC design layout having a feature with an outer boundary, performing a dissection on the feature to divide the outer boundary into a plurality of segments, and performing, using the segments, an optical proximity correction (OPC) on the feature to generate a modified outer boundary. The method also includes simulating a photolithography exposure of the feature with the modified outer boundary to create a contour and performing an OPC evaluation to determine if the contour is within a threshold. Additionally, the method includes repeating the performing a dissection, the performing an optical proximity correction, and the simulating if the contour does not meet the threshold, wherein each repeated dissection and each repeated optical proximity correction is performed on the modified outer boundary generated by the previously performed optical proximity correction. | ||||||
| 6 | Matching / adjusting the vicinity of the pattern-dependent, including light manipulation by the projection optical system | JP2011242151 | 2011-11-04 | JP5491480B2 | 2014-05-14 | フェン，ハンイェン; カオ，ユー; イエ，ジュン |
| 7 | Pattern dependent matching/adjustment of neighborhood including optical operation by projection optical system | JP2011242151 | 2011-11-04 | JP2012104824A | 2012-05-31 | FENG HANYING; CAO YU; YE JUN |
| PROBLEM TO BE SOLVED: To optimize a lithographic apparatus and an illumination light source for process, and a projection optical system.SOLUTION: In a method of verifying the characteristics of a lithography projection apparatus for a reference lithography projection apparatus, optimization of the characteristics of a projection optical system is included in the verification. In order to shape the wave front of the lithography projection apparatus, projection optical components may be used. The method can be accelerated by using a linear fit algorithm, or the Taylor series expansion using partial derivative of a transmission cross coefficient (TCC). | ||||||
| 8 | Manufacturing method of color resist layer | US15116223 | 2016-06-29 | US09897848B2 | 2018-02-20 | Lixuan Chen |
| The invention provides a manufacturing method of color resist layer to manufacture the color resist layer by micro transfer printing (MTP), comprising forming a color resist thin film on a first substrate, using a MTP transfer stamp to adsorb a part of the color resist thin film to the plurality of protrusions of the MTP transfer stamp, and transferring the color resist thin film adsorbed by the plurality of protrusions of the MTP transfer stamp to the second substrate to form the color resist layer on the second substrate. The method uses the protrusions of the MTP transfer stamp to form the pattern to control the pattern of the color resist layer instead of exposure and development. No color resist material is wasted, the cost is reduced and the process is simple and widely applicable. | ||||||
| 9 | MANUFACTURING METHOD OF COLOR RESIST LAYER | US15116223 | 2016-06-29 | US20170371200A1 | 2017-12-28 | Lixuan Chen |
| The invention provides a manufacturing method of color resist layer to manufacture the color resist layer by micro transfer printing (MTP), comprising forming a color resist thin film on a first substrate, using a MTP transfer stamp to adsorb a part of the color resist thin film to the plurality of protrusions of the MTP transfer stamp, and transferring the color resist thin film adsorbed by the plurality of protrusions of the MTP transfer stamp to the second substrate to form the color resist layer on the second substrate. The method uses the protrusions of the MTP transfer stamp to form the pattern to control the pattern of the color resist layer instead of exposure and development. No color resist material is wasted, the cost is reduced and the process is simple and widely applicable. | ||||||
| 10 | Semiconductor structure and method of generating masks for making integrated circuit | US13650859 | 2012-10-12 | US09053255B2 | 2015-06-09 | Hui Yu Lee; Feng Wei Kuo; Jui-Feng Kuan; Yi-Kan Cheng |
| A method of generating masks for making an integrated circuit includes determining if a coupling capacitance value of a conductive path of a first and second groups of conductive paths of the integrated circuit is greater than a predetermined threshold value. The determination is performed based on at least a resistance-capacitance extraction result of the conductive path and a predetermined level of mask misalignment. The layout patterns are modified to increase an overall vertical distance between the first group of conductive paths and the second group of conductive paths if the coupling capacitance value is greater than the predetermined threshold value. | ||||||
| 11 | Pattern-dependent proximity matching/tuning including light manipulation by projection optics | US14046778 | 2013-10-04 | US08806394B2 | 2014-08-12 | Hanying Feng; Yu Cao; Jun Ye |
| Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs). | ||||||
| 12 | SEMICONDUCTOR STRUCTURE AND METHOD OF GENERATING MASKS FOR MAKING INTEGRATED CIRCUIT | US13650859 | 2012-10-12 | US20140103545A1 | 2014-04-17 | Hui Yu LEE; Feng Wei KUO; Jui-Feng KUAN; Yi-Kan CHENG |
| A method of generating masks for making an integrated circuit includes determining if a coupling capacitance value of a conductive path of a first and second groups of conductive paths of the integrated circuit is greater than a predetermined threshold value. The determination is performed based on at least a resistance-capacitance extraction result of the conductive path and a predetermined level of mask misalignment. The layout patterns are modified to increase an overall vertical distance between the first group of conductive paths and the second group of conductive paths if the coupling capacitance value is greater than the predetermined threshold value. | ||||||
| 13 | Semiconductor structure having a plurality of conductive paths | US14698168 | 2015-04-28 | US09698099B2 | 2017-07-04 | Hui Yu Lee; Feng Wei Kuo; Jui-Feng Kuan; Yi-Kan Cheng |
| A semiconductor structure includes a first conductive path and a second conductive path configured to carry a first pair of differential signals representative of an in-phase signal. The semiconductor device further includes a third conductive path and a fourth conductive path configured to carry a second pair of differential signals representative of a quadrature signal corresponding to the in-phase signal. The first and second conductive paths are in a conductive layer of the semiconductor structure, and the third and fourth conductive paths are in another conductive layer of the semiconductor structure. | ||||||
| 14 | SEMICONDUCTOR STRUCTURE | US14698168 | 2015-04-28 | US20150228576A1 | 2015-08-13 | Hui Yu LEE; Feng Wei KUO; Jui-Feng KUAN; Yi-Kan CHENG |
| A semiconductor structure includes a first conductive path and a second conductive path configured to carry a first pair of differential signals representative of an in-phase signal. The semiconductor device further includes a third conductive path and a fourth conductive path configured to carry a second pair of differential signals representative of a quadrature signal corresponding to the in-phase signal. The first and second conductive paths are in a conductive layer of the semiconductor structure, and the third and fourth conductive paths are in another conductive layer of the semiconductor structure. | ||||||
| 15 | Pattern-dependent proximity matching/tuning including light manipulation by projection optics | US13293113 | 2011-11-09 | US08560978B2 | 2013-10-15 | Hanying Feng; Yu Cao; Jun Ye |
| Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs). | ||||||
| 16 | METHOD AND APPARATUS FOR ENHANCED OPTICAL PROXIMITY CORRECTION | US13414183 | 2012-03-07 | US20130239071A1 | 2013-09-12 | Chia-Cheng Chang; Chin-Min Huang; Wei-Kuan Yu; Cherng-Shyan Tsay; Lai Chien Wen; Hua-Tai Lin |
| Provided is an integrated circuit (IC) design method. The method includes receiving an IC design layout having a feature with an outer boundary, performing a dissection on the feature to divide the outer boundary into a plurality of segments, and performing, using the segments, an optical proximity correction (OPC) on the feature to generate a modified outer boundary. The method also includes simulating a photolithography exposure of the feature with the modified outer boundary to create a contour and performing an OPC evaluation to determine if the contour is within a threshold. Additionally, the method includes repeating the performing a dissection, the performing an optical proximity correction, and the simulating if the contour does not meet the threshold, wherein each repeated dissection and each repeated optical proximity correction is performed on the modified outer boundary generated by the previously performed optical proximity correction. | ||||||
| 17 | Pattern-Dependent Proximity Matching/Tuning Including Light Manipulation By Projection Optics | US13293113 | 2011-11-09 | US20120117521A1 | 2012-05-10 | Hanying Feng; Yu Cao; Jun Ye |
| Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs). | ||||||
| 18 | Bemoval op watebrttqs fbom goffebed films | US1807822D | US1807822A | 1931-06-02 | ||
| 19 | 투영 광학기에 의한 광 조작을 포함하는 패턴-의존적 근접성 매칭/조율 | KR1020110116567 | 2011-11-09 | KR101501580B1 | 2015-03-11 | 펭,한윙; 카오,유; 예,준 |
| 본 명세서에는 리소그래피 투영 장치의 특성을 기준 리소그래피 투영 장치와 매칭시키는 방법들이 개시되며, 상기 매칭 방법은 투영 광학기 특성들을 최적화하는 단계를 포함한다. 투영 광학기는 리소그래피 투영 장치에서 파면을 성형하는데 사용될 수 있다. 본 명세서의 실시예들에 따르면, 상기 방법들은 투과 교차 함수(TCC)들의 편도함수를 이용하는 테일러 급수 전개(Taylor series expansion)를 이용하거나 선형 피팅 알고리즘(linear fitting algorithm)을 이용함에 의해 가속될 수 있다. | ||||||
| 20 | 투영 광학기에 의한 광 조작을 포함하는 패턴-의존적 근접성 매칭/조율 | KR1020110116567 | 2011-11-09 | KR1020120050390A | 2012-05-18 | 펭,한윙; 카오,유; 예,준 |
| PURPOSE: Pattern-dependent proximity matching/tuning including light manipulation by a projection optic device is provided to increase optimization by using a numerical technique. CONSTITUTION: A multi-variable cost function of design variables is defined(302). The cost function shows the lithography reaction difference between a lithographic process and a reference lithographic process. At least some of the design variables include the properties of a projection optic device. The design variables are adjusted until a predefined termination condition is satisfied(304). The properties of the lithographic process are re-configured. | ||||||
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