子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 图案形成膜的刻蚀条件的测评 | CN201210543966.0 | 2012-11-16 | CN103123442A | 2013-05-29 | 五十岚慎一; 吉川博树; 稻月判臣; 金子英雄 |
| 本发明涉及图案形成膜的刻蚀条件的测评。具体地，连同光掩模坯料，其包括透明衬底、图案形成膜以及刻蚀掩模膜，通过如下方式测评所述图案形成膜的一组刻蚀条件：测量第一刻蚀完成时间(C1)，其是在施加于图案形成膜的刻蚀条件下刻蚀该刻蚀掩模膜时所花费的时间，测量第二刻蚀完成时间(C2)，其是在所述刻蚀条件下刻蚀该图案形成膜时所花费的时间，以及计算第一与第二刻蚀完成时间的比值(C1/C2)。 | ||||||
| 2 | 一种印制低图案密度部件的极紫外线光刻工艺 | CN201510282331.3 | 2015-05-28 | CN105278256A | 2016-01-27 | 卢彦丞; 游信胜; 陈政宏; 严涛南 |
| 本发明提供一种用于极紫外线光刻(EUVL)工艺的方法。方法包括：将二元相位掩模(BPM)加载至光刻系统，其中BPM包括两种相位状态并且限定在其上的集成电路(IC)图案；根据IC图案将光刻系统的照射装置设定为照射模式；根据照射模式将光瞳滤波器配置在光刻系统中；以及通过照射模式的光刻系统，利用BPM和光瞳滤波器对靶子执行光刻曝光工艺。本发明还提供了一种印制低图案密度部件的极紫外线光刻工艺。 | ||||||
| 3 | 光掩膜坯料的制造方法 | CN201410499396.9 | 2014-09-25 | CN104460224A | 2015-03-25 | 吉井崇; 河合义夫; 稻月判臣; 渡边聪; 池田显; 桜田豊久; 金子英雄 |
| 本发明的课题是涉及一种光掩膜坯料，所述光掩膜坯料在对含有硅的无机膜实施硅烷化处理后形成抗蚀膜，并提供一种光掩膜坯料的制造方法，其能够抑制在显影后因抗蚀剂残渣等所引起的缺陷的产生。为了解决上述问题，提供一种光掩膜坯料的制造方法，其是制造以下的光掩模坯料的方法，所述光掩膜坯料在透明基板上至少具有含有硅的无机膜，并在该无机膜上具有抗蚀膜，所述光掩膜坯料的制造方法是在形成前述无机膜后，以高于200℃的温度，在含有氧气的环境中进行热处理，再进行硅烷化处理，然后利用涂布来形成前述抗蚀膜。 | ||||||
| 4 | 光掩模坯料及其制造方法 | CN201410499354.5 | 2014-09-25 | CN104460221A | 2015-03-25 | 稻月判臣; 吉井崇; 桜田豊久; 池田显; 金子英雄; 渡边聪; 河合义夫 |
| 本发明涉及一种光掩模坯料，所述光掩模坯料在对含有硅的无机膜实施硅烷化处理后形成抗蚀膜，并提供一种光掩模坯料及其制造方法，其能够抑制在显影后因抗蚀剂残渣等所引起的缺陷的产生。为了解决上述问题，提供一种光掩膜坯料的制造方法，其是制造以下的光掩模坯料的方法，所述光掩模坯料在透明基板上至少具有含有硅的含硅无机膜，并在该含硅无机膜上具有抗蚀膜，所述光掩模坯料的制造方法是在形成前述含硅无机膜后，进行硅烷化处理，然后利用涂布来形成前述抗蚀膜，所述含硅无机膜的与前述抗蚀膜接触的表面中的氧浓度为55原子％以上且75原子％以下。 | ||||||
| 5 | Evaluation of etching conditions for pattern-forming film | US13678714 | 2012-11-16 | US08992788B2 | 2015-03-31 | Shinichi Igarashi; Hiroki Yoshikawa; Yukio Inazuki; Hideo Kaneko |
| In conjunction with a photomask blank comprising a transparent substrate, a pattern-forming film, and an etch mask film, a set of etching conditions for the pattern-forming film is evaluated by measuring a first etching clear time (C1) taken when the etch mask film is etched under the etching conditions to be applied to the pattern-forming film, measuring a second etching clear time (C2) taken when the pattern-forming film is etched under the etching conditions, and computing a ratio (C1/C2) of the first to second etching clear time. | ||||||
| 6 | EVALUATION OF ETCHING CONDITIONS FOR PATTERN-FORMING FILM | US13678714 | 2012-11-16 | US20130126471A1 | 2013-05-23 | Shinichi IGARASHI; Hiroki YOSHIKAWA; Yukio INAZUKI; Hideo KANEKO |
| In conjunction with a photomask blank comprising a transparent substrate, a pattern-forming film, and an etch mask film, a set of etching conditions for the pattern-forming film is evaluated by measuring a first etching clear time (C1) taken when the etch mask film is etched under the etching conditions to be applied to the pattern-forming film, measuring a second etching clear time (C2) taken when the pattern-forming film is etched under the etching conditions, and computing a ratio (C1/C2) of the first to second etching clear time. | ||||||
| 7 | Extreme ultraviolet lithography process to print low pattern density features | US14289474 | 2014-05-28 | US09535334B2 | 2017-01-03 | Yen-Cheng Lu; Shinn-Sheng Yu; Jeng-Horng Chen; Anthony Yen |
| The present disclosure provides a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a binary phase mask (BPM) to a lithography system, wherein the BPM includes two phase states and defines an integrated circuit (IC) pattern thereon; setting an illuminator of the lithography system in an illumination mode according to the IC pattern; configuring a pupil filter in the lithography system according to the illumination mode; and performing a lithography exposure process to a target with the BPM and the pupil filter by the lithography system in the illumination mode. | ||||||
| 8 | METHOD FOR MANUFACTURING PHOTOMASK BLANK | US14489229 | 2014-09-17 | US20150086909A1 | 2015-03-26 | Takashi YOSHII; Yoshio KAWAI; Yukio INAZUKI; Satoshi WATANABE; Akira IKEDA; Toyohisa SAKURADA; Hideo KANEKO |
| The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the inorganic film, comprising: forming the silicon-containing inorganic film; heat treating the formed silicon-containing inorganic film at a temperature more than 200° C. under an atmosphere containing oxygen; performing a silylation process after the heat treatment; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development. | ||||||
| 9 | PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK BLANK | US14489019 | 2014-09-17 | US20150086908A1 | 2015-03-26 | Yukio INAZUKI; Takashi YOSHII; Toyohisa SAKURADA; Akira IKEDA; Hideo KANEKO; Satoshi WATANABE; Yoshio KAWAI |
| The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development. | ||||||
| 10 | PHASE SHIFT MASK, METHOD OF FORMING ASYMMETRIC PATTERN, METHOD OF MANUFACTURING DIFFRACTION GRATING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | US14350314 | 2012-09-13 | US20140302679A1 | 2014-10-09 | Kazuyuki Kakuta; Toshihiko Onozuka; Shigeru Matsui; Yoshisada Ebata; Norio Hasegawa |
| A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer. | ||||||
| 11 | フォトマスクブランクおよびその製造方法 | JP2014164960 | 2014-08-13 | JP2016035546A | 2016-03-17 | 稲月 判臣; 吉井 崇; 桜田 豊久; 池田 顕; 金子 英雄; 渡邉 聡; 河合 義夫 |
| 【課題】珪素を含有する無機膜にシリル化処理を施してからレジスト膜を形成するフォトマスクブランクに関し、現像後、レジスト残渣などによる欠陥の発生を抑制することができるフォトマスクブランクおよびその製造方法を提供する。 【解決手段】透明基板上に、少なくとも、珪素を含有する珪素含有無機膜を有し、該珪素含有無機膜上にレジスト膜を有するフォトマスクブランクの製造方法あって、前記レジスト膜と接することになる表面における酸素濃度が55原子%以上75原子%以下の前記珪素含有無機膜を形成した後、シリル化処理を行い、その後、塗布により前記レジスト膜を形成するフォトマスクブランクの製造方法。 【選択図】図2 |
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| 12 | 回折格子の製造方法 | JP2011222907 | 2011-10-07 | JP5841797B2 | 2016-01-13 | 角田 和之; 小野塚 利彦; 松井 繁; 江畠 佳定; 長谷川 昇雄 |
| 13 | Method of evaluating etching condition of pattern forming film | JP2011252970 | 2011-11-18 | JP2013109099A | 2013-06-06 | IGARASHI SHINICHI; YOSHIKAWA HIROKI; INAZUKI SADAOMI; KANEKO HIDEO |
| PROBLEM TO BE SOLVED: To provide a method of evaluating an etching condition of a pattern forming film capable of finding out a satisfactory etching condition by evaluating both etching resistance in etching a pattern forming film for an etching mask film and etching characteristics in etching a patter forming film for a pattern forming film.SOLUTION: With regard to a pattern forming film of a photomask blank which comprises a transparent substrate, a pattern forming film for forming a photomask pattern disposed on the transparent substrate, and an etching mask film used as an etching mask of the pattern forming film disposed on the pattern forming film, an etching condition is set to an etching condition applied to the pattern forming film in forming the photomask pattern, and evaluation is performed by measuring an etching clear time (C1) when the etching mask film is etched and an etching clear time (C2) when the pattern forming film is etched and computing a clear time ratio (C1/C2) between the two. | ||||||
| 14 | Photomask blank and method for manufacturing photomask blank | US15284098 | 2016-10-03 | US09709885B2 | 2017-07-18 | Yukio Inazuki; Takashi Yoshii; Toyohisa Sakurada; Akira Ikeda; Hideo Kaneko; Satoshi Watanabe; Yoshio Kawai |
| A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate includes forming the silicon-containing inorganic film such that a surface has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent, the silicon-containing inorganic film being an SiO film or an SiON film and serving as a hard mask film. | ||||||
| 15 | PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK BLANK | US15284098 | 2016-10-03 | US20170023855A1 | 2017-01-26 | Yukio INAZUKI; Takashi YOSHII; Toyohisa SAKURADA; Akira IKEDA; Hideo KANEKO; Satoshi WATANABE; Yoshio KAWAI |
| A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate includes forming the silicon-containing inorganic film such that a surface has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent, the silicon-containing inorganic film being an SiO film or an SiON film and serving as a hard mask film. | ||||||
| 16 | Photomask blank and method for manufacturing photomask blank | US14489019 | 2014-09-17 | US09488906B2 | 2016-11-08 | Yukio Inazuki; Takashi Yoshii; Toyohisa Sakurada; Akira Ikeda; Hideo Kaneko; Satoshi Watanabe; Yoshio Kawai |
| The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development. | ||||||
| 17 | Method for manufacturing photomask blank | US14489229 | 2014-09-17 | US09400422B2 | 2016-07-26 | Takashi Yoshii; Yoshio Kawai; Yukio Inazuki; Satoshi Watanabe; Akira Ikeda; Toyohisa Sakurada; Hideo Kaneko |
| The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the inorganic film, comprising: forming the silicon-containing inorganic film; heat treating the formed silicon-containing inorganic film at a temperature more than 200° C. under an atmosphere containing oxygen; performing a silylation process after the heat treatment; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development. | ||||||
| 18 | Phase shift mask, method of forming asymmetric pattern, method of manufacturing diffraction grating, and method of manufacturing semiconductor device | US14350314 | 2012-09-13 | US09390934B2 | 2016-07-12 | Kazuyuki Kakuta; Toshihiko Onozuka; Shigeru Matsui; Yoshisada Ebata; Norio Hasegawa |
| A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer. | ||||||
| 19 | Halftone phase shift photomask blank, halftone phase shift photomask and pattern exposure method | US14520415 | 2014-10-22 | US09366951B2 | 2016-06-14 | Yukio Inazuki; Toyohisa Sakurada; Hideo Kaneko; Takuro Kosaka; Kouhei Sasamoto |
| A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film is provided. The phase shift film consists of Si and N, or Si, N and O, and is free of transition metals. The phase shift film has a thickness of 40-70 nm, offers a transmittance of 10-40% and a phase shift of 150-200° relative to light of wavelength up to 200 nm, and is resistant to cleaning chemicals. | ||||||
| 20 | Pattern formation method | US14576435 | 2014-12-19 | US09349585B2 | 2016-05-24 | Sonoe Nakaoka; Kentaro Matsunaga; Eiji Yoneda |
| According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns. | ||||||
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