Piezoelectric acoustic surface wave device utilizing an amorphous semiconductive sensing material专利检索-脉冲电场电场物理专利检索查询-专利查询网

Piezoelectric acoustic surface wave device utilizing an amorphous semiconductive sensing material

阅读：491发布：2023-08-09

专利汇可以提供Piezoelectric acoustic surface wave device utilizing an amorphous semiconductive sensing material专利检索，专利查询，专利分析的服务。并且An integrated acoustic surface wave device is provided by this disclosure wherein a piezoelectric field associated with an acoustic surface wave causes a material adjacent to the surface to transform from one physical state to another physical state. The changes in state due to the presence of the piezoelectric wave are utilized to detect, amplify and store information. The presence of the piezoelectric wave controls external physical quantities, e.g., voltage and current, for information processing and storage. In particular, an amorphous semiconducting material is deposited on the surface of a piezoelectric surface wave acoustic delay line at a location where the presence of the traversing piezoelectric wave is to be detected. Contact electrodes are provided on the amorphous material and are connected to an external electrical circuit wherein there is a voltage source and a load means. The voltage source provides an electric field in the amorphous material of a value below that necessary to achieve the threshold value for switching the material from a high-voltage and low-current state to a highcurrent and low-voltage state. In this manner, the piezoelectric field of the acoustic surface wave which transiently appears at the amorphous material when added to the externally applied electric field causes it to switch states and thereby gives rise to a pulse indication in the external electrical circuit. Accordingly, an integrated apparatus in accordance with this disclosure includes a piezoelectric surface wave delay line and an amorphous semiconductor film. A transducer on the surface of the piezoelectric crystal generates piezoelectric surface waves therein, and a local receiving transducer which serves as the electrodes for the amorphous semiconductor film intercepts the piezoelectric surface wave. The electric field associated with the surface wave supplements a bias electric field at the amorphous semiconductor film and causes the states thereof to switch and provides an indication of the presence of the piezoelectric wave in the external electric circuit connected to the amorphous film.，下面是Piezoelectric acoustic surface wave device utilizing an amorphous semiconductive sensing material专利的具体信息内容。

权利要求

1. In a piezoelectric surface wave delay line including an input transducer means and an output transducer means for launching and receiving respectively a piezoelectric surface wave pulse in said delay line, the improvement comprising: a layer of material adjacent to said output transducer in electric field communicating position therewith, said material having first and second physical states switchable by an applied threshold electric field from said first state to said second state manifestable by a change in a detectable physical property, and capability of retaining a bias electric field which taken together with said piezoelectric field is at least equal to said threshold electric field.

2. Device as set forth in claim 1 wherein said material is an amorphous semiconductor material.

3. Device as set forth in claim 2 wherein said amorphous semiconductor material is ovonic material.

4. Device as set forth in claim 1 including at least two sequentially located output transducers and respective layers of said material thereat wherein said sequential output transducers are spaced a distance equivalent to said pulse time width divided by the velocity of propagation of said surface wave in said device.

5. Piezoelectric surface wave structure comprising: a piezoelectric surface wave propagation member; an input transducer on said piezoelectric surface wave member for launching piezoelectric surface waves therein; and an output transducer configuration for providing an indication of the transient presence of a piezoelectric surface wave thereat including an electrode structure for intercepting the piezoelectric field of said piezoelectric surface wave, and a layer of material adjacent to said electrode structure for enveloping said piezoelectric surface wave to provide a change of state therein manifestable by a detectable change in a physical property of said material, and external circuitry connected to said electrode structure and said layer of material to provide an indication of the transient presence of sad piezoelectric surface wave at said transducer configuration.

6. Piezoelectric surface wave device comprising: a piezoelectric surface wave propagation member; an input transducer means on said piezoelectric surface wave member for launching piezoelectric surface waves therein including pulse source means for energizing said waves; an output transducer configuration for providing an indication of the transient presence of a piezoelectric surface wave including an electrode structure for intercepting the piezoelectric field of said piezoelectric surface wave, a layer of material adjacent to said electrode structure for enveloping said piezoelectric surface wave to provide a change of state therein manifestable by a detectable change in a physical property of said material, and external circuitry connected to said electrode structure and said layer of material to provide an indication of the transient presence of said piezoelectric surface wave at said transducer configuration due to said change of state therein.

7. A device as set forth in claim 6 which includes bias voltage source means to establish a bias electric field in said layer of material.

8. Device as set forTh in claim 6 wherein said input transducer and said output transducer are interdigital transducers.

9. Device as set forth in claim 6 wherein said layer of material proximate to said electrode structure is an amorphous semiconductor material having a high resistance state and a low resistance state.

10. Device as set forth in claim 9 wherein said amorphous semiconductor material is an ovonic material.

11. Device as set forth in claim 6 wherein said pulse source means provides radiofrequency pulses.

12. Device as set forth in claim 6 wherein said pulse source means provides video pulses.

13. Recirculating piezoelectric surface wave device comprising: piezoelectric surface wave propagating member; an input transducer for launching piezoelectric surface waves in said member; an output transducer configuration comprising an electrode structure for sensing said piezoelectric surface waves, and a layer of material adjacent to said electrode structure having two resistance states dependent on the presence of a threshold electric filed; voltage source means connected to said output transducer configuration for biasing it below a threshold value for switching states of said layer of material which taken together with the manifestation of the transient piezoelectric wave at said output transducer configuration provides a manifestation of the transient presence of said piezoelectric wave; and feedback path means between said output transducer and said input transducer including read-out circuitry and read-in circuitry for identifying the transient presence of said piezoelectric wave at said output transducer and for translating said identification to said input transducer for recirculating said piezoelectric pulse in said piezoelectric surface wave member.

14. Pulse scanner device comprising: a piezoelectric surface wave device; input transducer means for launching piezoelectric surface waves in said piezoelectric surface wave device including a pulse source means; a plurality of sequentially spaced output electrode structures on said piezoelectric surface wave device for presenting a respective series of pulses representative of the transient presence of said piezoelectric surface waves at said output electrode structure, each said output electrode structure including a layer of material having two states dependent upon the threshold electric field therein; voltage means for biasing said output structures stably below said threshold value of electric field for said layer of material for each said output transducer structure; and output means for presenting an indication of each said transient presence of said piezoelectric surface waves at the respective output electrode structure as a consequence of change of said states of said layer of material.

15. Coincidence selection device comprising: first and second piezoelectric surface wave devices including respectively first and second input means for launching respectively piezoelectric surface waves in said piezoelectric devices; first and second equal pluralities of output transducer configurations on said first and second piezoelectric surface wave devices, respectively, for providing indications of the transient presence of said respective piezoelectric surface waves thereat, each said output configuration including an electrode structure and a layer of material adjacent thereto having two states dependent upon the magnitude of the electric field therein, and biasing means for establishing a bias electric field in each said output electric structure stably below the threshold value for switching states of said layered material; load matrix means connected to said first and second pluralities of electrode structures in coordinate relationship; whereby timed selection of said output electrode structures selects a given load means from said selection matrix as a consequence of change of said states of the respective layers of materials adjacent to said electrode structures.

16. Coincidence selection device as set forth in claim 15 wherein X decoder means and Y decoder means are connected respectively to said matrix to identify the location of said given selected load means.

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Piezoelectric acoustic surface wave device utilizing an amorphous semiconductive sensing material

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