Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To join a metallic wire and an electrode excellently without damaging the electrode and a semiconductor chip by constituting the electrode of a lower electrode layer formed through evaporation at a high temperature, an upper electrode layer shaped through evaporation at a low temperature and a barrier layer formed by using a material mounted between both electrode layers, harder than both electrode layers and difficult to be diffused.
CONSTITUTION: An aluminum film is evaporated onto a semiconductor chip 2 at a high temperature through an evaporation method to shape a lower electrode layer 13a, a chromium film is also evaporated onto the lower electrode layer 13a through the evaporation method to form a barrier layer 13b, and an aluminum film is evaporated onto said barrier layer 13b at a low temperature through the evaporation method to shape an upper electrode layer 13c, thus forming an electrode 13 having three-layer structure. The ball 10a of a copper wire 10 is ball-bonded with the electrode 13 on the semiconductor chip 2 by ultrasonic vibrations by using a capillary chip 5 while another side of the copper wire 1 is switch-bonded with a lead 4. Said barrier layer 13b is shaped by employing chromium as a material harder than the electrode layers 13a, 13b and difficult to be diffused. Chromium is employed so that the barrier layer 13b does not form an intermetallic compound layer.
COPYRIGHT: (C)1987,JPO&Japio，下面是Semiconductor device专利的具体信息内容。
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3 细胞培养体系
