Formation of electrode of waveguide type optical device
专利汇可以提供Formation of electrode of waveguide type optical device专利检索，专利查询，专利分析的服务。并且PURPOSE:To surely prevent fluctuation in an operating point by having a stage for forming an insulating buffer layer on a light guide consisting of a ferroelectric material having a pyroelectric effect and a stage for forming a metallic film which hardly oxidizes a semiconductor film on the buffer layer. CONSTITUTION:The buffer layer 12 consisting of SiO2 and having about 2,000Angstrom thickness is formed on the waveguide 11 consisting of a Z-plate LiNbO3. The semiconductive film 13 consisting of Si and having about 500-1,000Angstrom thickness and a 1st metallic layer 14 consisting of Ti and having about 300Angstrom thickness are successively formed on the above-mentioned buffer layer 12 in succession thereto without breaking the vacuum in one device. Namely, the semiconductive film 13 consisting of the easily oxidizable Si and the 1st metallic film 14 consisting of the hardly oxidizable and inexpensive Ti are formed by sputtering, etc., without breaking the vacuum in this case. Since a uniform charge distribution is obtd. by the effect of the semiconductive film 13 formed without being oxidized, the fluctuation of the operating point is surely prevented.，下面是Formation of electrode of waveguide type optical device专利的具体信息内容。
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6 热电元件
