Process for epitaxially growing semiconductor crystals
专利汇可以提供Process for epitaxially growing semiconductor crystals专利检索，专利查询，专利分析的服务。并且A semiconductor with a P/N junction, adapted to be used as a detector or emitter of luminous radiation, is grown from a bath consisting of a liquefied mixture of three elements which are the constituents of two alloys or solid solutions taken from Groups II/VI and/or IV/VI of the Periodic Table. The proportions of the three elements in the mixture are so chosen that the solidus curve of the temperature/composition diagram intersects the stoichiometric line at a point lying along the boundary between the solid and the solid/liquid phase on the side of the lower concentrations of the element common to the two alloys. In a state of thermodynamic equilibrium for the liquid/solid phase, the bath is slowly cooled in a temperature range above or below a critical temperature corresponding to the point of intersection with resulting growth of an N-type or P-type layer on a substrate immersed in the bath. By a change in the composition, with or without a shift in temperature, the conductivity type of the layer is altered with formation of a P/N junction.，下面是Process for epitaxially growing semiconductor crystals专利的具体信息内容。
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