Velocity modulation type field-effect transistor
专利汇可以提供Velocity modulation type field-effect transistor专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable a field effect transistor of this design to execute a velocity modulation well by a method wherein a pair of quantum well layers, which are formed of different materials and arranged adjacent to each other through the intermediary of a tunnel barrier, and provided as channels.
CONSTITUTION: A buffer layer 2 of i-AlGaAs and an undoped first quantum channel layer 3 are formed on an S, I, GaAs substrate 1 through a molecular beam epitaxial growth method. Furthermore, a potential barrier layer 4, a second channel layer 5, and a gate insulating layer 6 are successively laminated thereon. Then, a gate electrode 8 is built on the insulating layer 6, as IS and an ID are formed through ion implantation, and a source electrode 9S and a drain electrodes 9D are formed through evaporation. When the channel layers 3 and 5 are brought into ohmic contact and the thicknesses of the channel layers 3 and 5 different from each other in lattice constant are reduced to a critical thickness or below where a misfit transition occurs, an excellent interface can be obtained. By this setup, an excellent velocity modulation can be realized.
COPYRIGHT: (C)1991,JPO&Japio，下面是Velocity modulation type field-effect transistor专利的具体信息内容。
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