专利汇可以提供Semiconductor memory and manufacture thereof专利检索,专利查询,专利分析的服务。并且PURPOSE:To increase the density and the capacity of a semiconductor memory by separating between groove-shaped capacities by semiconductor substrate containing high density impurity, storing information charge at capacity electrode side to suppress a leakage current and to reduce a software error rate due to alpha-particles. CONSTITUTION:A thin P-type silicon film layer 102 containing 10 -10 atoms/cm is formed by an epitaxially growing technique on a P-type silicon substrate 101 containing 10 atoms/cm or more of impurity density. After thus formed, the thin P-type silicon film layer is selectively thermally oxidized to form an insulating element separating region 103. Higher density impurity is abnormally diffused in the film layer under the region 103 than the substrate 101 by this thermal oxidation to contain high density impurity in a thin P-type silicon film layer 104 under the insulating element separating regin. After thus formed, grooves extending in the substrate 101 are formed in a desired region except the region 103, dielectric films 105 are deposited on the side walls of the grooves, and a capacity electrode 106 is formed of a polysilicon or a high melting point metal containing effective impurity in the attitude for burying the grooves.,下面是Semiconductor memory and manufacture thereof专利的具体信息内容。
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