专利汇可以提供Solid-state image pickup device专利检索,专利查询,专利分析的服务。并且PURPOSE:To improve sensitivity to light of a solid-state image sensing device extending over the whole range of visible rays by a method wherein the photo detecting part is formed of two layers consisting of the upper layer part of amorphous silicon hydride containing nitrogen of 6-37 atom% and the lower layer part made by dispersing fine crystal silicon and amorphous silicon uniformly. CONSTITUTION:A diode is formed in a p type semicoductor substrate 10 by the n type region 11, and the first gate electrode 14 has the overlapping part with the region 14. A gate oxide film 15 is formed between the substrate 10 and the electrode 14, and an insulator layer 16 isolates the first electrode 17 and the substrate 10 and the electrode 14. The photo detecting part is formed of the n type finely crystallized silicon layer 18, and i type finely crystallized silicon layer 19, the i type amorphous silicon layer 20 containing nitrogen, and the p type amorphous silicon layer 21 containing nitrogen to constitute a p-i-n type photo diode. A transparent electrode 22 is provided at the upper part of the photo detecting part, and a positive voltage is applied from an electric power source 23.,下面是Solid-state image pickup device专利的具体信息内容。
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