Semiconductor light detector

阅读:879发布:2021-08-07

专利汇可以提供Semiconductor light detector专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain a semiconductor light detector by which withstanding voltage around an element can be increased and reliability is improved, without decreasing high speed response and photoelectric transducing efficiency. CONSTITUTION:In a P-I-N photodiode, a P-Cd high concentration diffused layer (a third semiconductor crystal layer) 16 wherein Cd is diffused is formed on a light incident surface of an upper part of a low impurity concentration N-InP epitaxially grown layer 14. In this case, the light incident layer of the N-InP epitaxially grown layer 14 is formed in a concave shape, its central part is flat, and its outer peripheral part is formed in a curved surface which is smoothly continued to the central flat part. In this constitution, degradation of the withstanding voltage at the peripheral part of the junction part between a second semiconductor crystal layer 15 and the third semiconductor crystal layer 16 can be prevented just like the effect of a guard ring. The concentration of an electric field at the peripheral part can be prevented just like the case of Rogowski electrode. Uniform avalanche multiplication is generated at the central part where light is imputted and an S/N ratio can be increased.,下面是Semiconductor light detector专利的具体信息内容。

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台,是提供专利分析,专利查询,专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据,免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析,涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度,系统通过AI智能系统对图表进行解读,只需1分钟,一键生成行业专利分析报告。

申请试用

QQ群二维码
意见反馈