专利汇可以提供Semiconductor light detector专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain a semiconductor light detector by which withstanding voltage around an element can be increased and reliability is improved, without decreasing high speed response and photoelectric transducing efficiency. CONSTITUTION:In a P-I-N photodiode, a P-Cd high concentration diffused layer (a third semiconductor crystal layer) 16 wherein Cd is diffused is formed on a light incident surface of an upper part of a low impurity concentration N-InP epitaxially grown layer 14. In this case, the light incident layer of the N-InP epitaxially grown layer 14 is formed in a concave shape, its central part is flat, and its outer peripheral part is formed in a curved surface which is smoothly continued to the central flat part. In this constitution, degradation of the withstanding voltage at the peripheral part of the junction part between a second semiconductor crystal layer 15 and the third semiconductor crystal layer 16 can be prevented just like the effect of a guard ring. The concentration of an electric field at the peripheral part can be prevented just like the case of Rogowski electrode. Uniform avalanche multiplication is generated at the central part where light is imputted and an S/N ratio can be increased.,下面是Semiconductor light detector专利的具体信息内容。
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