Compound semiconductor photoreceptor
专利汇可以提供Compound semiconductor photoreceptor专利检索，专利查询，专利分析的服务。并且PURPOSE: To prevent the loss of function of a pin-photodiode caused by an interfacial level influence of grating unconformity by making the semiconductor laminate for relaxing the grating constant between an n
+ -type substrate and an n-layer of the pn-laminate into an n
+ -type.
CONSTITUTION: An In
x Ga
1-x As laminate 5' is provided between an n
+ -type GaAs substrate 1 and a laminate 4 of p-layer 3 and n-layer 2, both of which having a same x value of In
x Ga
1-x As and no difference in grating constant. Each layer 5a∼ 5e is formed by epitaxial growth with increased value in said order, so as to relax the grating constant difference between the n
+ -type substrate 1 and the laminate 4. By thus excluding grating unconformity of the laminate proper by means of making the laminate 5' into a n
+ -type to prevent an influence of an interfacial level, a pin- type photo diode, wherein the layer 3 in p and the layers 2 and 5' are i and the substrate 1 is n, can show its function to the full.
COPYRIGHT: (C)1980,JPO&Japio，下面是Compound semiconductor photoreceptor专利的具体信息内容。
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