Semiconductor photo detection device
专利汇可以提供Semiconductor photo detection device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain the light detection output with large gain through the reduced floating capacity by developing the epitaxial growth on the semiconductor substrate and forming the two resistances serving as the light derection element and load respectively within that epitaxial growth.
CONSTITUTION: On an N-type semiconductor substrate 1 developed is an epitaxial growth to form an N-type layer 2 with higher specific resistance than that of the substrate. Within the layer 2 formed are P-type zones 5 and 6 with same impurity atom concentration through the diffusion, and each zone 5 and 6 serves as a resistance R and a light detection element D respectively. Next, a terminal 8 is provided at the zone 6, a wiring 9 is connected between the zones 5 and 6, and then a terminal 10 is attached to the wiring 9. Also on the backside formed is a terminal 7. Thus, the light detection element D of PIN-type photodiode and the resistance R as load hold their positions within one substrate. After that a light L is radiated into the zone 5. By doing so, the output voltage caused by the incidence of the light into the zone 5 can be taken out through the terminals 8 and 10, and thus obtained voltage level becomes higher due to the structure where the floating capacity is reduced possibly small.
COPYRIGHT: (C)1980,JPO&Japio，下面是Semiconductor photo detection device专利的具体信息内容。
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