Semiconductor transducer device专利检索-压电效应电磁学专利检索查询-专利查询网

Semiconductor transducer device

阅读：848发布：2022-03-11

专利汇可以提供Semiconductor transducer device专利检索，专利查询，专利分析的服务。并且According to the invention, there is disclosed a miniature electromechanical junction transducer, the operation of which is based on piezojunction effect. The mechanical imput coupling member, in the subject invention, as distinguished from the prior art, is formed in situ and is spread over the top of the mesa structure to form an exact duplicate of the mesa surface at the area of contact.，下面是Semiconductor transducer device专利的具体信息内容。

权利要求

1. A stress sensitive device, comprising: a semiconductor having a mesa region and a junction; a stress coupling member; a portion of said stress coupling member being molded in situ in engagement with and bonded to said mesa region; first and second electrically conductive contact members; a conductive element electrically connecting said first contact member to said mesa region; the opposite end of said semiconductor being in electrical contact with said second contact member; a spacer member extending between said first and second contact members, said spacer member and said contact members forming a cavity; said semiconductor and said stress coupling member being disposed within said cavity.

2. The invention as defined in claim 1 wherein said cavity is partially filled with an inert material, said inert material being in contact with a portion of said stress coupling member and said semiconductor to fix the position of said stress coupling member and said semiconductor, said inert material having a modulus of elasticity longer than that of said stress coupling member and said semiconductor.

3. The invention as defined in claim 1 wherein said stress coupling member comprises an apex portion, said apex portion being bonded to said mesa region.

4. The invention as defined in claim 1 wherein a seismic mass is affixed to said stress coupling member.

5. The invention as defined in claim 1 wherein said stress coupling member comprises a preformed electrically conductive mass portion, a thin electrically conductive coupling layer portion molded in situ as a coupling interface between said mesa region and said preformed mass portion.

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Semiconductor transducer device

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